Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer
作者： Jongwoon Park , Yoichi Kawakami
DOI: 10.1063/1.2205731
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摘要: We investigate the photoluminescence (PL) properties of a thick InGaN single quantum well (SQW) in which an AlGaN δ layer is embedded. The offers extra degree freedom may be employed to tune emission wavelength. One most salient features such QW structure that long-wavelength tuning feasible with lower indium composition. also increases wave function overlap between holes and electrons, shortening PL lifetime. All measurement results are consistent numerical predictions. could great importance design lasers.
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