Brian Romanczyk
机构: Postdoctoral Researcher, University of California Santa Barbara
每年引用次数
引用次数
引用: 1,556
H-指数: 22
I10-指数 : 39
出版物: 71
Demonstration of Record-High mm-Wave Power Performance using N-Polar Gallium Nitride HEMTs
Brian Romanczyk , Matt Guidry , Xun Zheng , Haoran Li
Journal of the Microelectronic Engineering Conference 25 ( 1) 24
2
2019
6.2 W/mm and Record 33.8% PAE at 94 GHz from N-polar GaN Deep Recess MIS-HEMTs with ALD Ru Gates
Nirupam Hatui , Brian Romanczyk , Umesh K. Mishra , Xun Zheng
IEEE Microwave and Wireless Components Letters 1 -1
26
2021
Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull
Matthew Guidry , Steven Wienecke , Brian Romanczyk , Haoran Li
international microwave symposium 1 -4
14
2016
First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain
Chirag Gupta , Yusuke Tsukada , Brian Romanczyk , Shubhra S Pasayat
Japanese Journal of Applied Physics 58 ( 3) 030908
8
2019
High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion
Xun Zheng , Haoran Li , Elaheh Ahmadi , Karine Hestroffer
2016 Lester Eastman Conference (LEC) 42 -45
10
2016
High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces
Silvia H Chan , Stacia Keller , Maher Tahhan , Haoran Li
Semiconductor Science and Technology 31 ( 6) 065008
10
2016
First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE
Shubhra S Pasayat , Elaheh Ahmadi , Brian Romanczyk , Onur Koksaldi
Semiconductor Science and Technology 34 ( 4) 045009
7
2019
Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD
Cory Lund , Anchal Agarwal , Brian Romanczyk , Thomas Mates
Semiconductor Science and Technology 33 ( 9) 095014
11
2018
First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel
Weiyi Li , Shubhra S Pasayat , Matthew Guidry , Brian Romanczyk
Semiconductor Science and Technology 35 ( 7) 075007
7
2020
High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications
Onur S Koksaldi , Brian Romanczyk , Jeffrey Haller , Matthew Guidry
Semiconductor Science and Technology 35 ( 12) 124004
2020
Improved operation stability of in-situ AlSiO dielectric grown on (000-1) N-polar GaN by MOCVD
Islam Sayed , Wenjian Liu , Brian Romanczyk , Jana Georgieva
Applied Physics Express 13 ( 6) 061010
8
2020
W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width
Matthew Guidry , Steven Wienecke , Brian Romanczyk , Xun Zheng
arftg microwave measurement conference 1 -4
7
2016
N-polar GaN Cap MISHEMT with record 6.7 W/mm at 94 GHz
Steven Wienecke , Brian Romanczyk , Matthew Guidry , Haoran Li
device research conference 1 -2
4
2016
mm-Wave N-polar GaN MISHEMT with a self-aligned recessed gate exhibiting record 4.2 W/mm at 94 GHz on Sapphire
Brian Romanczyk , Steven Wienecke , Matthew Guidry , Haoran Li
device research conference 1 -2
6
2016
N-polar GaN MIS-HEMTs on sapphire with a proposed figure of merit f max ·V DS, Q of 9.5THz.V
Xun Zheng , Matthew Guidry , Haoran Li , Brian Romanczyk
device research conference 1 -2
3
2017
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
Brian Romanczyk , Steven Wienecke , Matthew Guidry , Haoran Li
IEEE Transactions on Electron Devices 65 ( 1) 45 -50
153
2018
Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs
Brian Romanczyk , Matthew Guidry , Xun Zheng , Haoran Li
IEEE Transactions on Electron Devices 67 ( 4) 1542 -1546
1
2020
Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels
Haoran Li , Steven Wienecke , Brian Romanczyk , Elaheh Ahmadi
Applied Physics Letters 112 ( 7) 073501
6
2018
Virtual-Source Modeling of N-polar GaN MISHEMTS
Rohit R Karnaty , Matthew Guidry , Pawana Shrestha , Brian Romanczyk
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) 1 -4
2019
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT
Pawana Shrestha , Matthew Guidry , Brian Romanczyk , Rohit R Karnaty
device research conference 1 -2
2020