6.2 W/mm and Record 33.8% PAE at 94 GHz from N-polar GaN Deep Recess MIS-HEMTs with ALD Ru Gates

作者: Nirupam Hatui , Brian Romanczyk , Umesh K. Mishra , Xun Zheng , Stacia Keller

DOI: 10.1109/LMWC.2021.3067228

关键词:

摘要: … metal, the N-polar GaN device in this … N-polar GaN due to lower than usual 2DEG charge in this sample. Despite the lower power density in this work compared with some prior N-polar …

参考文章(0)