作者: Nirupam Hatui , Brian Romanczyk , Umesh K. Mishra , Xun Zheng , Stacia Keller
DOI: 10.1109/LMWC.2021.3067228
关键词:
摘要: … metal, the N-polar GaN device in this … N-polar GaN due to lower than usual 2DEG charge in this sample. Despite the lower power density in this work compared with some prior N-polar …