6.2 W/mm and Record 33.8% PAE at 94 GHz from N-polar GaN Deep Recess MIS-HEMTs with ALD Ru Gates
Nirupam Hatui , Brian Romanczyk , Umesh K. Mishra , Xun Zheng
IEEE Microwave and Wireless Components Letters 1 -1
26
2021
Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films
Nirupam Hatui , Umesh K. Mishra , Stacia Keller , Shubhra S. Pasayat
Electronics 10 ( 10) 1182
2021
Influence of Nucleation Layers on MOVPE Growth of Semipolar ($$11{\bar{2}}2$$) GaN on m-Plane Sapphire
Nirupam Hatui , Arnab Bhattacharya , Carina B. Maliakkal , Jayesh B. Parmar
Journal of Electronic Materials
2021
Influence of buffer layers on the microstructure of MOVPE grown a-plane InN
Masihhur R. Laskar , Tapas Ganguli , Abdul Kadir , Nirupam Hatui
Journal of Crystal Growth 315 ( 1) 233 -237
9
2011
High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers
Masihhur R. Laskar , Tapas Ganguli , Nirupam Hatui , A.A. Rahman
Journal of Crystal Growth 315 ( 1) 208 -210
16
2011
Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers
Priti Gupta , A. A. Rahman , Nirupam Hatui , Jayesh B. Parmar
Applied Physics Letters 103 ( 18) 181108
17
2013
Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates
Cory Lund , Karine Hestroffer , Nirupam Hatui , Shuji Nakamura
Applied Physics Express 10 ( 11) 111001
9
2017
Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy
Christian Wurm , Elaheh Ahmadi , Feng Wu , Nirupam Hatui
Solid State Communications 305 113763
12
2020
First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel
Weiyi Li , Shubhra S Pasayat , Matthew Guidry , Brian Romanczyk
Semiconductor Science and Technology 35 ( 7) 075007
7
2020
The Mechanism of Ni-Assisted GaN Nanowire Growth.
Carina B. Maliakkal , Nirupam Hatui , Rudheer D. Bapat , Bhagyashree A. Chalke
Nano Letters 16 ( 12) 7632 -7638
26
2016
Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors
Athith Krishna , Aditya Raj , Nirupam Hatui , Islam Sayed
Applied Physics Letters 117 ( 4) 042104
11
2020
Anisotropic structural and optical properties of a-plane (112¯0) AlInN nearly-lattice-matched to GaN
Masihhur R. Laskar , Tapas Ganguli , A. A. Rahman , Ashish Arora
Applied Physics Letters 98 ( 18) 181108
17
2011
Large exciton g-factors in anisotropically strained A-plane GaN film measured using magneto-optical Kerr effect spectroscopy
Ashish Arora , Nirupam Hatui , Arnab Bhattacharya , Sandip Ghosh
Applied Physics Letters 103 ( 5) 052109
2013
Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content
Masihhur R. Laskar , Tapas Ganguli , A. A. Rahman , Amlan Mukherjee
Journal of Applied Physics 109 ( 1) 013107
39
2011
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
Athith Krishna , Aditya Raj , Nirupam Hatui , Stacia Keller
arXiv: Applied Physics
4
2019
MOVPE growth of semipolar III-nitride semiconductors on CVD graphene
Priti Gupta , A.A. Rahman , Nirupam Hatui , M.R. Gokhale
Journal of Crystal Growth 372 105 -108
62
2013
MOVPE growth of semipolar (112¯2) Al1−xInxN across the alloy composition range (0≤x≤0.55)
Nirupam Hatui , Martin Frentrup , A. Azizur Rahman , Abdul Kadir
Journal of Crystal Growth 411 106 -109
15
2015
Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates
Carina B. Maliakkal , A. Azizur Rahman , Nirupam Hatui , Bhagyashree A. Chalke
Journal of Crystal Growth 439 47 -53
4
2016
Direct MOVPE growth of semipolar (112¯2) AlxGa1−xN across the alloy composition range
Nirupam Hatui , A. Azizur Rahman , Carina B. Maliakkal , Arnab Bhattacharya
Journal of Crystal Growth 437 1 -5
10
2016
Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN
Shubhra S. Pasayat , Nirupam Hatui , Weiyi Li , Chirag Gupta
Applied Physics Letters 117 ( 6) 062102
3
2020