Optoelectronic devices based on III-N quantum wells grown on CVD graphene
Priti Gupta , A. Azizur Rahman , Nirupam Hatui , Mahesh Gokhale
Photonics 1 -2
2012
Virtual-Source Modeling of N-polar GaN MISHEMTS
Rohit R Karnaty , Matthew Guidry , Pawana Shrestha , Brian Romanczyk
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) 1 -4
2019
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT
Pawana Shrestha , Matthew Guidry , Brian Romanczyk , Rohit R Karnaty
device research conference 1 -2
2020
Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage
Wenjian Liu , Islam Sayed , Brian Romanczyk , Nirupam Hatui
device research conference 1 -2
2020
Fabrication and characterization of GaN nanowire doubly clamped resonators
Carina B. Maliakkal , John P. Mathew , Nirupam Hatui , A. Azizur Rahman
Journal of Applied Physics 118 ( 11) 114301
7
2015
Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current
Wenjian Liu , Islam Sayed , Brian Romanczyk , Nirupam Hatui
IEEE Electron Device Letters 41 ( 10) 1468 -1471
2020
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density
Brian Romanczyk , Weiyi Li , Matthew Guidry , Nirupam Hatui
IEEE Electron Device Letters 41 ( 11) 1633 -1636
25
2020
Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction
Martin Frentrup , Nirupam Hatui , Tim Wernicke , Joachim Stellmach
Journal of Applied Physics 114 ( 21) 213509
26
2013
Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current
Aditya Raj , Athith Krishna , Nirupam Hatui , Chirag Gupta
IEEE Electron Device Letters 41 ( 2) 220 -223
37
2020
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs
Brian Romanczyk , Xun Zheng , Matthew Guidry , Haoran Li
IEEE Electron Device Letters 41 ( 3) 349 -352
64
2020
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz
Pawana Shrestha , Matthew Guidry , Brian Romanczyk , Nirupam Hatui
IEEE Electron Device Letters 41 ( 5) 681 -684
36
2020
First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET
Chirag Gupta , Silvia H. Chan , Anchal Agarwal , Nirupam Hatui
IEEE Electron Device Letters 38 ( 11) 1575 -1578
32
2017
Demonstration of acceptor-like traps at positive polarization interfaces in Ga-polar p-type (AlGaN/AlN)/GaN superlattices
Athith Krishna , Aditya Raj , Nirupam Hatui , Stacia Keller
Crystals 12 ( 6) 784
2
2022
Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices
Athith Krishna , Aditya Raj , Nirupam Hatui , Stacia Keller
Applied Physics Letters 120 ( 13)
5
2022
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs
Weiyi Li , Brian Romanczyk , Matthew Guidry , Emre Akso
IEEE Transactions on Electron Devices 70 ( 4) 2075 -2080
2023
First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7\% PAE at 94 GHz
Emre Akso , Henry Collins , Christopher Clymore , Weiyi Li
IEEE Microwave and Wireless Technology Letters
2023
2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature
Caroline E Reilly , Nirupam Hatui , Thomas E Mates , Shuji Nakamura
Applied Physics Letters 118 ( 22)
3
2021
Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise
Matthew Guidry , Pawana Shrestha , Wenjian Liu , Brian Romanczyk
Smpte Journal 291 -294
1
2022
Demonstration of device-quality 60\% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE
Christian Wurm , Henry Collins , Nirupam Hatui , Weiyi Li
Journal of Applied Physics 131 ( 1)
4
2022
GaN/AlGaN superlattice based E-mode hole channel FinFET with Schottky gate
Aditya Raj , Athith Krishna , Brian Romanczyk , Nirupam Hatui
IEEE Electron Device Letters 44 ( 1) 9 -12
2022