Kadir Abdul
机构: Singapore-MIT Alliance for Research and Technology
每年引用次数
引用次数
引用: 441
H-指数: 13
I10-指数 : 17
出版物: 27
Alloy disorder effects on the room temperature optical properties of Ga1−xInxNyAs1−y quantum wells
Arnab Bhattacharya , Bhavtosh Bansal , Abdul Kadir , Rajaram Bhat
Applied Physics Letters 89 ( 3) 032110
16
2006
Photoluminescence from localized states in disordered indium nitride
Victor Moshchalkov , Arnab Bhattacharya , Bhavtosh Bansal , Abdul Kadir
Applied Physics Letters 93 ( 2) 021113
12
2008
Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE
Abdul Kadir , Konrad Bellmann , Tino Simoneit , Markus Pristovsek
Physica Status Solidi (a) 209 ( 12) 2487 -2491
2
2012
The role of InGaN interlayers on the microstructure of InN epilayers grown via metal organic vapour phase epitaxy
Abdul Kadir , Tapas Ganguli , M. R. Gokhale , A. P. Shah
Physica Status Solidi (a) 207 ( 5) 1070 -1073
1
2010
Influence of buffer layers on the microstructure of MOVPE grown a-plane InN
Masihhur R. Laskar , Tapas Ganguli , Abdul Kadir , Nirupam Hatui
Journal of Crystal Growth 315 ( 1) 233 -237
9
2011
Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy
Abdul Kadir , Christian Meissner , Tilman Schwaner , Markus Pristovsek
Journal of Crystal Growth 334 ( 1) 40 -45
12
2011
Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes
Suman De , Arunasish Layek , Archana Raja , Abdul Kadir
Advanced Functional Materials 21 ( 20) 3828 -3835
36
2011
Non-intrinsic superconductivity in InN epilayers: Role of Indium Oxide
Abdul Kadir , Sourin Mukhopadhyay , Tapas Ganguli , Charudatta Galande
Solid State Communications 146 ( 9) 361 -364
20
2008
Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system
Abdul Kadir , Chieh Chih Huang , Kenneth Eng Kian Lee , Eugene A. Fitzgerald
Applied Physics Letters 105 ( 23) 232113
16
2014
Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
Suman De , Arunasish Layek , Sukanya Bhattacharya , Dibyendu Kumar Das
Applied Physics Letters 101 ( 12) 121919
41
2012
Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy
Markus Pristovsek , Abdul Kadir , Michael Kneissl
Japanese Journal of Applied Physics 52 ( 8S) 08JB23
4
2013
Determination of InN-GaN heterostructure band offsets from internal photoemission measurements
Zahid Hasan Mahmood , A. P. Shah , Abdul Kadir , M. R. Gokhale
Applied Physics Letters 91 ( 15) 152108
18
2007
The role of hydrostatic stress in determining the bandgap of InN epilayers
Abdul Kadir , Tapas Ganguli , Ravi Kumar , M. R. Gokhale
Applied Physics Letters 91 ( 11) 111913
26
2007
Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy
Markus Pristovsek , Abdul Kadir , Christian Meissner , Tilman Schwaner
Journal of Applied Physics 110 ( 7) 073527
11
2011
Growth mode transition and relaxation of thin InGaN layers on GaN (0001)
Markus Pristovsek , Abdul Kadir , Christian Meissner , Tilman Schwaner
Journal of Crystal Growth 372 65 -72
14
2013
MOVPE growth of semipolar (112¯2) Al1−xInxN across the alloy composition range (0≤x≤0.55)
Nirupam Hatui , Martin Frentrup , A. Azizur Rahman , Abdul Kadir
Journal of Crystal Growth 411 106 -109
15
2015
Charge deep level transient spectroscopy of electron traps in MOVPE grown n‐GaN on sapphire
Zahid Hasan Mahmood , A. P. Shah , Abdul Kadir , M. R. Gokhale
Physica Status Solidi B-basic Solid State Physics 245 ( 11) 2567 -2571
10
2008
Light-Emitting Diodes: Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes (Adv. Funct. Mater. 20/2011)
Suman De , Arunasish Layek , Archana Raja , Abdul Kadir
Advanced Functional Materials 21 ( 20) 3827 -3827
2011
Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor
Abdul Kadir , Tapas Ganguli , M.R. Gokhale , A.P. Shah
Journal of Crystal Growth 298 403 -408
26
2007
Microstructure of InN epilayers deposited in a close-coupled showerhead reactor
Tapas Ganguli , Abdul Kadir , Mahesh Gokhale , Ravi Kumar
Journal of Crystal Growth 310 ( 23) 4942 -4946
8
2008