Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system
作者： Abdul Kadir , Chieh Chih Huang , Kenneth Eng Kian Lee , Eugene A. Fitzgerald , Soo Jin Chua
DOI: 10.1063/1.4904007
关键词:
摘要: A method for absolute evaluation of alloy composition and strain in AlGaN buffer layers GaN/Si system is described, which can be applied to any III-nitride alloys hetero-epitaxially grown on Si (111) or sapphire (0001) substrate. Absolute measurements reciprocal space maps (10-14) nitride are performed with the help (313) lattice points. The strain-relaxation state all directly calculated from values points referenced proposed analysis using substrate more accurate than currently favored an epitaxial GaN layer used as reference. knowledge greater accuracy would useful designing growing devices.
scitation.org
harvard.edu
aip.org 
sci-hub.se 参考文章(14)
H. Angerer, D. Brunner, F. Freudenberg, O. Ambacher, M. Stutzmann, R. Höpler, T. Metzger, E. Born, G. Dollinger, A. Bergmaier, S. Karsch, H.-J. Körner, Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films Applied Physics Letters. ,vol. 71, pp. 1504- 1506 ,(1997) , 10.1063/1.119949
S. Pereira, M. R. Correia, T. Monteiro, E. Pereira, E. Alves, A. D. Sequeira, N. Franco, Compositional dependence of the strain-free optical band gap in InxGa1−xN layers Applied Physics Letters. ,vol. 78, pp. 2137- 2139 ,(2001) , 10.1063/1.1358368
Alois Krost, Armin Dadgar, GaN-based optoelectronics on silicon substrates Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 93, pp. 77- 84 ,(2002) , 10.1016/S0921-5107(02)00043-0
M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, K. Pakula, J. M. Baranowski, C. T. Foxon, T. S. Cheng, Lattice parameters of gallium nitride Applied Physics Letters. ,vol. 69, pp. 73- 75 ,(1996) , 10.1063/1.118123
Fabrice Oehler, Mary E. Vickers, Menno J. Kappers, Colin J. Humphreys, Rachel A. Oliver, Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds Japanese Journal of Applied Physics. ,vol. 52, pp. 08JB29- ,(2013) , 10.7567/JJAP.52.08JB29
MA Moram, ME Vickers, X-ray diffraction of III-nitrides Reports on Progress in Physics. ,vol. 72, pp. 036502- ,(2009) , 10.1088/0034-4885/72/3/036502
S.Q. Zhou, M.F. Wu, L.N. Hou, S.D. Yao, H.J. Ma, R. Nie, Y.Z. Tong, Z.J. Yang, T.J. Yu, G.Y. Zhang, An approach to determine the chemical composition in InGaN/GaN multiple quantum wells Journal of Crystal Growth. ,vol. 263, pp. 35- 39 ,(2004) , 10.1016/J.JCRYSGRO.2003.11.046
Xiao-Ming Niu, Tetsuya Sakurai, A method for finding the zeros of polynomials using a companion matrix Japan Journal of Industrial and Applied Mathematics. ,vol. 20, pp. 239- 256 ,(2003) , 10.1007/BF03170428
M. Leroux, P. Gibart, Eric Feltin, B. Beaumont, M. Laügt, P. de Mierry, P. Vennéguès, H. Lahrèche, Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy Applied Physics Letters. ,vol. 79, pp. 3230- 3232 ,(2001) , 10.1063/1.1415043
D J Wallis, D Zhu, F Oehler, S P Westwater, A Pujol, C J Humphreys, Measuring the composition of AlGaN layers in GaN based structures grown on 150?mm Si substrates using (2?0?5) reciprocal space maps Semiconductor Science and Technology. ,vol. 28, pp. 094006- ,(2013) , 10.1088/0268-1242/28/9/094006