Alloy disorder effects on the room temperature optical properties of Ga1−xInxNyAs1−y quantum wells
作者： Arnab Bhattacharya , Bhavtosh Bansal , Abdul Kadir , Rajaram Bhat , B. M. Arora
DOI: 10.1063/1.2227618
关键词:
摘要: The effect of alloy disorder on optical density states and average room-temperature carrier statistics in Ga1−xInxNyAs1−y quantum wells is discussed. A redshift between the peak photoluminescence surface photovoltage spectra that systematically increases with nitrogen content y observed. relationship this Stokes shift absorption linewidth different samples suggests photoexcited carriers undergo a continuous transition—from quasithermal equilibrium lattice to complete trapping by dot like potential fluctuations—with increase fraction. “electron temperatures” inferred from are consistent interpretation.
scitation.org
harvard.edu
arxiv-vanity.com
aip.org 
arxiv.org 参考文章(20)
M.-A. Pinault, E. Tournié, On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells Applied Physics Letters. ,vol. 78, pp. 1562- 1564 ,(2001) , 10.1063/1.1354153
Shouvik Datta, Sandip Ghosh, B. M. Arora, Electroreflectance and surface photovoltage spectroscopies of semiconductor structures using an indium-tin-oxide-coated glass electrode in soft contact mode Review of Scientific Instruments. ,vol. 72, pp. 177- 183 ,(2001) , 10.1063/1.1332114
M. Grassi Alessi, F. Fragano, A. Patanè, M. Capizzi, E. Runge, R. Zimmermann, Competition between radiative decay and energy relaxation of carriers in disordered In x Ga 1-x As/GaAs quantum wells Physical Review B. ,vol. 61, pp. 10985- 10993 ,(2000) , 10.1103/PHYSREVB.61.10985
H. D. Sun, M. Hetterich, M. D. Dawson, A. Yu. Egorov, D. Bernklau, H. Riechert, Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content Journal of Applied Physics. ,vol. 92, pp. 1380- 1385 ,(2002) , 10.1063/1.1489716
P. R. C. Kent, Alex Zunger, Evolution of III-V nitride alloy electronic structure: the localized to delocalized transition. Physical Review Letters. ,vol. 86, pp. 2613- 2616 ,(2001) , 10.1103/PHYSREVLETT.86.2613
R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, James S. Harris, Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb∕GaAsN∕GaAs quantum well tailored at 1.5μm: The energy level structure and the Stokes shift Journal of Applied Physics. ,vol. 97, pp. 053515- ,(2005) , 10.1063/1.1854729
R Bhat, C Caneau, Lourdes Salamanca-Riba, W Bi, C Tu, Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition Journal of Crystal Growth. ,vol. 195, pp. 427- 437 ,(1998) , 10.1016/S0022-0248(98)00574-0
P. G. Eliseev, The red σ2/kT spectral shift in partially disordered semiconductors Journal of Applied Physics. ,vol. 93, pp. 5404- 5415 ,(2003) , 10.1063/1.1567055
A. Polimeni, A. Patanè, M. Grassi Alessi, M. Capizzi, F. Martelli, A. Bosacchi, S. Franchi, STOKES SHIFT IN QUANTUM WELLS : TRAPPING VERSUS THERMALIZATION Physical Review B. ,vol. 54, pp. 16389- 16392 ,(1996) , 10.1103/PHYSREVB.54.16389
Peter J. Klar, Recent developments in metastable dilute-N III–V semiconductors Progress in Solid State Chemistry. ,vol. 31, pp. 301- 349 ,(2003) , 10.1016/J.PROGSOLIDSTCHEM.2004.02.001