W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs
作者： Brian Romanczyk , Xun Zheng , Matthew Guidry , Haoran Li , Nirupam Hatui
关键词:
摘要: … The N-polar GaN deep recess HEMT used in this study was … GaN buffer and consisted of a 10-nm-thick Si-doped GaN layer… The W-band power performance of N-polar GaN deep recess …
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