Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers
作者： Priti Gupta , A. A. Rahman , Nirupam Hatui , Jayesh B. Parmar , Bhagyashree A. Chalke
DOI: 10.1063/1.4827539
关键词:
摘要: We report the synthesis and optical characterization of semipolar-oriented III-nitride quantum well (QW) structures obtained by growth on chemical vapor deposited graphene layers using metalorganic phase epitaxy. Various multi-quantum stacks GaN(QW)/AlGaN(barrier) InGaN (QW)/GaN (barrier) were grown. Growth not only helps achieve a semipolar orientation but also allows facile transfer QW multilayer stack to other cheap, flexible substrates. demonstrate room-temperature photoluminescence from transferred Kapton films.
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