Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
作者： Yuji Zhao , Qimin Yan , Chia-Yen Huang , Shih-Chieh Huang , Po Shan Hsu
DOI: 10.1063/1.4719100
关键词:
摘要: We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization x-ray diffraction (XRD) analysis indicate that the (202¯1¯) (112¯2) planes have highest rate among studied planes. also show both composition polarization-related electric fields impact emission wavelength of quantum wells (QWs). The different magnitudes directions for each orientation result in potential profiles QWs, leading to wavelengths at a given composition.
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