Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
作者： Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
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摘要: This work examines the effects of polarization-related electric fields on energy band diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum wells various crystal orientations, including polar (0001) (c -plane), semipolar (2021), nonpolar (1010) (m-plane). Based simulations, we show that (2021) orientation exhibits excellent potential development high-efficiency, low-droop light-emitting diodes (LEDs). We then present recent advancements in growth, optical performance, thermal performance LEDs. Finally, demonstrate a low-droop, high-efficiency single-quantum-well blue LED with an external more than 50% at 100 A/cm2.
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