Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN “double miscut” substrates
作者： Leah Y. Kuritzky , Daniel J. Myers , Joseph Nedy , Kathryn M. Kelchner , Shuji Nakamura
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摘要: InxGa1−xN quantum wells (QWs) grown by metalorganic chemical vapor deposition on bulk m-plane GaN substrates with surface miscut −1° toward [0001] ("−1° c-miscut") currently suffer from low indium uptake and broad luminescence linewidth in the blue spectrum. New "double miscuts" components combined a- c-directions exhibit more uniform step flow growth homoepitaxy than coloaded c-miscut substrates. QWs double surfaces reproducibly higher uptake, narrower symmetric electroluminescence lineshapes spectrum, output power at peak wavelength those surfaces.
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