MISHFET and Schottky device integration
作者： James A. Teplik , Bruce M. Green
DOI:
关键词:
摘要: A semiconductor device includes a substrate comprising heterostructure configured to support formation of channel during operation, first and second dielectric layers supported by the substrate, layer being disposed between gate in opening layer, which bias voltage is applied operation control current flow through channel, an electrode layers, establish Schottky junction with substrate.
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