Isolation structure in gallium nitride devices and integrated circuits
作者： Seshadri Kolluri , Chunhua Zhou , Jianjun Cao , Ming-Kun Chiang , Robert Beach
DOI:
关键词: Barrier layer 、 Semiconductor device 、 Optoelectronics 、 Layer (electronics) 、 Transistor 、 Ohmic contact 、 Field-effect transistor 、 Gallium nitride 、 Thin-film transistor 、 Materials science
摘要: An integrated semiconductor device which includes a substrate layer, buffer layer formed on the gallium nitride and barrier layer. Ohmic contacts for plurality of transistor devices are Specifically, first ohmic portion surface second In addition, one or more gate structures third between devices. Preferably, spaces source collectively form an isolation region that electrically isolates from device.
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