NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy
作者： J.R. Lang , J.S. Speck
DOI: 10.1016/J.JCRYSGRO.2012.02.036
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摘要: Abstract N-rich growth by NH 3 -based molecular beam epitaxy was investigated for intermediate-temperature GaN and InGaN on c-plane templates. The dependences of mode surface morphology group-V overpressure, In/Ga ratio, temperature were explored with atomic force microscopy high resolution x-ray diffraction. Extension to an “ultra-NH -rich” regime very -flows showed a decreased rate increased In-content alloys constant group III source fluxes. Rapid modulation rate, substrate has enabled the quality, many-period InGaN/GaN superlattices, while suppressing morphological instabilities subsequent stress relaxation.
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