Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
作者： Stephen W. Kaun , Man Hoi Wong , Sansaptak Dasgupta , Soojeong Choi , Roy Chung
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摘要: AlGaN/GaN heterostructures were regrown on three semi-insulating GaN templates with threading dislocation densities of ~2×1010, ~5×108, and ~5×107 cm-2. Regrowths carried out under Ga-rich conditions by plasma-assisted molecular beam epitaxy to determine the effects density leakage through Schottky contacts heterostructures. A similar heterostructure was directly grown 4H-SiC for comparison High electron mobility transistors fabricated. Decreasing from ~2×1010 cm-2 yielded up a 45-fold decrease in average reverse diode current at -10 V bias.
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