Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy
作者： S.Yu. Karpov , R.A. Talalaev , Yu.N. Makarov , N. Grandjean , J. Massies
DOI: 10.1016/S0039-6028(00)00055-8
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摘要: The kinetics of surface processes during the growth GaN by molecular-beam epitaxy (MBE) with ammonia as source reactive nitrogen is studied theoretically and experimentally. A model developed taking into account specific effects blocking NH3 adsorption sites Group III V species. Parameters (respective kinetic rate constants) are determined from comparison experimental data. It shown that evaporation in atmosphere much lower than vacuum. Kinetics under gallium-rich nitrogen-rich conditions compared. Under predicted to be enriched NH, radicals, contrast case or free use allows one increase temperature similar 80-90 degrees C compared plasma-activated MBE. increased favorable improving optical electrical properties material grown. (C) 2000 Elsevier Science B.V. All rights reserved.
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