Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy
作者： A. L. Corrion , F. Wu , J. S. Speck
DOI: 10.1063/1.4749262
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摘要: c-plane GaN films were grown by ammonia molecular beam epitaxy on metal-organic chemical vapor deposition templates for a wide range of NH3:Ga flux ratios and growth temperatures, the resulting characterized using atomic force microscopy, reflection high-energy electron diffraction, transmission microscopy. Three distinct nitrogen-rich regimes—unstable layer-by-layer, quasi-stable step flow, dislocation-mediated pitting—were identified based mode film properties. In addition, flow was observed under conditions gallium droplet accumulation. The results indicate existence two regimes step-flow MBE—both gallium-rich nitrogen-rich. Growth instabilities mound formation are discussed in context step-edge energy barrier to adatom diffusion over terrace.
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