Surface morphology evolution of m-plane (11¯00) GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature
作者： Jiayi Shao , Liang Tang , Colin Edmunds , Geoff Gardner , Oana Malis
DOI: 10.1063/1.4813079
关键词: Substrate (electronics) 、 Quantum well 、 Gallium 、 Materials science 、 Molecular beam epitaxy 、 Surface diffusion 、 Diffusion barrier 、 Crystallography 、 Optoelectronics 、 Sapphire 、 Wide-bandgap semiconductor
摘要: We present a systematic study of morphology evolution [11¯00] m-plane GaN grown by plasma-assisted molecular beam epitaxy on free-standing substrates with small miscut angles towards the –c [0001¯] and +c [0001] directions under various gallium to nitrogen (Ga/N) ratios at substrate temperatures T = 720 °C T = 740 °C. The direction, Ga/N ratio, growth temperature are all shown have dramatic impact morphology. observed dependence direction supports notion strong anisotropy in adatom diffusion barrier kinetics. demonstrate that precise control ratio yields atomically smooth oriented as well more commonly studied substrates.
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