George K Celler
机构: Professor of Materials Science, Rutgers University
每年引用次数
引用次数
引用: 8,004
H-指数: 44
I10-指数 : 133
出版物: 336
Technology in the next : Century reflections on electrochemistry and solid-state science and technology
K. Rajeshwar , R. G. Kelly , G. K. Cellar , K. Niki
The Electrochemical Society interface 9 ( 1) 20 -27
2000
Directed assembly and strain engineering of SiGe films and nanostructures
K. Slinker , Z. Q. Ma , M. A. Eriksson , P. P. Zhang
SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium 1153 -1160
1
2004
Mobility in Single and Double Gate Ultra-Thin SOI MOSFETs
C. Fiegna , Luca Selmi , David Esseni , M. Mastrapasqua
European Workshop on Ultimate Integration of Silicon (ULIS) 87
2001
Laser annealing of semiconductors (A)
G. K. Celler
Journal of the Optical Society of America 69 1461
1979
High quality Si‐on‐SiO2films by large dose oxygen implantation and lamp annealing
G. K. Celler , P. L. F. Hemment , K. W. West , J. M. Gibson
Applied Physics Letters 48 ( 8) 532 -534
143
1986
Improved quality Si‐on‐Si3N4 structures by ion beam synthesis and lamp annealing
KJ Reeson , PLF Hemment , CD Meekison , GR Booker
Applied Physics Letters 50 ( 26) 1882 -1884
13
1987
Segregation and drift of arsenic in SiO2 under the influence of a temperature gradient
G. K. Celler , L. E. Trimble , K. W. West , L. Pfeiffer
Applied Physics Letters 50 ( 11) 664 -666
17
1987
Deep Melting of Silicon Wafers
Lynn O. Wilson , G. K. Celler , L. E. Trimble
Journal of The Electrochemical Society 133 ( 2) 383 -389
5
1986
Lateral Epitaxial Growth over Oxide
Lynn O. Wilson , G. K. Celler
Journal of The Electrochemical Society 132 ( 11) 2748 -2758
14
1985
Dielectrically Isolated Thick Si Films by Lateral Epitaxy from the Melt
G. K. Celler , McD. Robinson , L. E. Trimble , D. J. Lischner
Journal of The Electrochemical Society 132 ( 1) 211 -219
23
1985
The nature of residual stress, defects, and device characteristics for thick single-crystalline Si films on oxidized Si wafers
L. E. Trimble , G. K. Celler , D. G. Schimmel , C. Y. Lu
Journal of Materials Research 3 ( 3) 514 -520
1
1988
Radiation-Tolerant, Sidewall-Hardened SOI/MOS Transistors
S. S. Tsao , D. M. Fleetwood , H. T. Weaver , L. Pfeiffer
IEEE Transactions on Nuclear Science 34 ( 6) 1686 -1691
16
1987
Laser Processing of Porous Silicon
H. Baumgart , R. C. Frye , L. E. Trimble , H. J. Leamy
MRS Proceedings 4 609
1
1981
Seeded Growth of Si Over SiO 2 Substrates by CW Laser Irradiation
L. E. Trimble , G. K. Celler , K. K. Ng , H. Baumgart
MRS Proceedings 4 505 -510
2
1981
Formation of p-n Junctions by Laser Processing Sb-Pt Thin Films on Si
R. J. Schutz , G. K. Celler , C. C. Chang
MRS Proceedings 4
1981
Optical Characterization of Chemically Vapor Deposited and Laser-Annealed Polysilicon
B. G. Bagley , D. E. Aspnes , G. K. Celler , A. C. Adams
MRS Proceedings 4 483
4
1981
Characterization of Ion-Implanted Si Rapidly Annealed with Incoherent Light
J. L. Benton , G. K. Celler , D. C. Jacobson , L. C. Kimerling
MRS Proceedings 4 765 -770
8
1981
Rapid Large Area Annealing of Ion-Implanted Si With Incoherent Light
D. J. Lischner , G. K. Celler
MRS Proceedings 4 759 -764
23
1981
Laser Induced Diffusion of Radioactive As into Si
Loren Pfeiffer , T. Kovacs , G. K. Celler , L. E. Trimble
MRS Proceedings 4 275 -280
1
1981
Laser annealing and crystallization of silicon
G. K. Celler
conference on lasers and electro-optics
1981