Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells
Sebastiano Strangio , Pierpaolo Palestri , DAVID Esseni , Luca Selmi
IEEE Journal of the Electron Devices Society 3 ( 3) 223 -232
51
2015
Simulation Study of Coulomb Mobility in Strained Silicon
DRIUSSI Francesco , ESSENI David
2009
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers
ESSENI David , PALESTRI Pierpaolo
2009
Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs
DRIUSSI Francesco , ESSENI David
2009
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach
ESSENI David , PALESTRI Pierpaolo , SELMI Luca
2009
Full Band and Approximated Solutions of the Schr\" odinger Equation in Silicon Inversion Layers
ESSENI David , PALESTRI Pierpaolo
Springer Wien New York
2004
Modeling of Mobility in Ultra-Thin SOI MOSFETs: Physical Understanding and Analytical Models for Device Simulators
ESSENI David , C FIEGNA , E SANGIORGI
Wiley--IEEE Press
55
2004
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes
David ESSENI , Pierpaolo PALESTRI , Luca SELMI , Enrico CARUSO
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme
Ruben SPECOGNA , David ESSENI
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs
David ESSENI
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications
Luca SELMI , Enrico CARUSO , Patrik OSGNACH , David ESSENI
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects
David ESSENI , Pierpaolo PALESTRI , Oves Mohamed Hussein BADAMI , Francesco DRIUSSI
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs
Pierpaolo PALESTRI , David ESSENI , Sebastiano STRANGIO , Francesco SETTINO
New design perspective for Ferroelectric NC-FETs
David ESSENI , TOMMASO ROLLO
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells
Enrico CARUSO , Luca SELMI , David ESSENI , Patrik OSGNACH
Modelling and design of Ferroelectric NC-FETs
David ESSENI
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits
David ESSENI , Pierpaolo PALESTRI , Luca SELMI , Sebastiano STRANGIO
A virtual III-V Tunnel FET technology platform for ultra-low voltage comparators and level shifters
Pierpaolo PALESTRI , David ESSENI
Early assessment of tunnel-FET for energy-efficient logic circuits
Pierpaolo PALESTRI , Sebastiano STRANGIO , David ESSENI