J. E. Rowe
机构: Research Professor of Physics
每年引用次数
引用次数
引用: 10,937
H-指数: 59
I10-指数 : 165
出版物: 377
Spectroscopic studies of O-vacancy defects in transition metal oxides
G. Lucovsky , J. Lüning , L. B. Fleming , M. D. Ulrich
Journal of Materials Science: Materials in Electronics 18 ( 1) 263 -266
1
2007
Chemisorption geometry on cleaved III-V surfaces: Cl on GaAs, GaSb, and InSb
G. Margaritondo , J. E. Rowe , C. M. Bertoni , C. Calandra
Physical Review B 20 ( 4) 1538 -1545
64
1979
Covalent bonding of metal atoms at the Schottky‐barrier interface of GaAs, Ge, and Si
J. E. Rowe
Journal of Vacuum Science and Technology 13 ( 4) 798 -801
25
1976
Surface photoelectric effect and surface orbital geometry on silicon (111)
J. E. Rowe , S. B. Christman
Journal of Vacuum Science and Technology 12 ( 1) 293 -297
7
1975
Chemisorption and Schottky barrier formation of Ga on Si(111) 7×7
G. Margaritondo , S. B. Christman , J. E. Rowe
Journal of Vacuum Science and Technology 13 ( 1) 329 -332
27
1976
Angular distribution of photoelectrons from (111) silicon surface states
M. M. Traum , J. E. Rowe , N. V. Smith
Journal of Vacuum Science and Technology 12 ( 1) 298 -300
43
1975
UHV facility for metal–semiconductor thin‐film studies
C. A. Crider , J. M. Poate , J. E. Rowe
Journal of Vacuum Science and Technology 15 ( 2) 215 -218
4
1978
Adatom bonding effects from coverage‐dependent angle‐resolved photoemission: Ag(001)+Cl
S. P. Weeks , J. E. Rowe
Journal of Vacuum Science and Technology 16 ( 2) 470 -473
40
1979
Chemisorption of Cl in surface vacancies on Si(111) 1×1
M. Schlüter , J. E. Rowe , S. P. Weeks , S. B. Christman
Journal of Vacuum Science and Technology 16 ( 2) 615 -617
10
1979
Are surface-atom vibrational amplitudes along the normal always larger than in the plane?
F. Sette , C. T. Chen , J. E. Rowe , P. H. Citrin
Physical Review Letters 59 ( 3) 311 -314
40
1987
Sette et al. respond.
F Sette , SJ Pearton , JM Poate , JE Rowe
Physical Review Letters 58 ( 12) 1281 -1281
1987
Vidicon‐camera parallel‐detection system for angle‐resolved electron spectroscopy
S. P. Weeks , J. E. Rowe , S. B. Christman , E. E. Chaban
Review of Scientific Instruments 50 ( 10) 1249 -1255
44
1979
INTERFACE ELECTRONIC STRUCTURE OF TA2O5-AL2O3 ALLOYS FOR SI-FIELD-EFFECT TRANSISTOR GATE DIELECTRIC APPLICATIONS
M. D. Ulrich , R. S. Johnson , J. G. Hong , J. E. Rowe
Journal of Vacuum Science & Technology B 20 ( 4) 1732 -1738
7
2002
Soft x-ray photoelectron spectroscopy of (HfO2)x(SiO2)1−x high-k gate-dielectric structures
M. D. Ulrich , J. G. Hong , J. E. Rowe , G. Lucovsky
Journal of Vacuum Science & Technology B 21 ( 4) 1777 -1782
30
2003
Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications
M. D. Ulrich , J. E. Rowe , D. Niu , G. N. Parsons
Journal of Vacuum Science & Technology B 21 ( 4) 1792 -1797
21
2003
Near-edge absorption fine structure and UV photoemission spectroscopy studies of aligned single-walled carbon nanotubes on Si(100) substrates
L. Fleming , M. D. Ulrich , K. Efimenko , J. Genzer
Journal of Vacuum Science & Technology B 22 ( 4) 2000 -2004
20
2004
Shallow acceptor complexes in p-type ZnO
J. G. Reynolds , C. L. Reynolds , A. Mohanta , J. F. Muth
Applied Physics Letters 102 ( 15) 152114
91
2013
Local bonding analysis of the valence and conduction band features of TiO2
L. Fleming , C. C. Fulton , G. Lucovsky , J. E. Rowe
Journal of Applied Physics 102 ( 3) 033707
67
2007
New Optical‐Quality Etch for II‐VI Compounds
J. E. Rowe , Richard A. Forman
Journal of Applied Physics 39 ( 3) 1917 -1918
8
1968
Photoemission and electron energy loss spectroscopy of GeO2and SiO2
J. E. Rowe
Applied Physics Letters 25 ( 10) 576 -578
65
1974