Michael Waltl
机构: Full Professor at TU Wien, Vienna, Austria
每年引用次数
引用次数
引用: 3,112
H-指数: 30
I10-指数 : 60
出版物: 181
Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors
H. Enichlmair , M. Waltl , B. Stampfer , J. Michl
international integrated reliability workshop
2020
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States
M. Waltl , T. Grasser , B. O'Sullivan , B. Stampfer
international reliability physics symposium 1 -6
2021
Complete extraction of defect bands responsible for instabilities in n and pFinFETs
G. Rzepa , M. Waltl , W. Goes , B. Kaczer
symposium on vlsi technology 1 -2
25
2016
The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits
B. Kaczer , J. Franco , P. Weckx , Ph.J. Roussel
Solid-state Electronics 125 52 -62
7
2016
Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs
A. Grill , B. Stampfer , Ki-Sik Im , J.-H. Lee
Solid-state Electronics 156 41 -47
2
2019
Highly-stable black phosphorus field-effect transistors with low density of oxide traps
Yu. Yu. Illarionov , M. Waltl , G. Rzepa , T. Knobloch
npj 2D Materials and Applications 1 ( 1) 1 -7
49
2017
Characterization and modeling of charge trapping: From single defects to devices
T. Grasser , G. Rzepa , M. Waltl , W. Goes
international conference on ic design and technology 1 -4
1
2014
Statistical Characterization of BTI and RTN using Integrated pMOS Arrays
B. Stampfer , M. Simicic , P. Weckx , A. Abbasi
international integrated reliability workshop
2
2019
Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects
D. Waldhoer , Y. Wimmer , A. M. El-Sayed , W. Goes
international integrated reliability workshop
2019
Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy
T. Grasser , K. Rott , H. Reisinger , P. Wagner
international reliability physics symposium
37
2013
Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias
J. Franco , B. Kaczer , M. Toledano-Luque , P. J. Roussel
international reliability physics symposium
23
2013
A unified perspective of RTN and BTI
T. Grasser , K. Rott , H. Reisinger , M. Waltl
international reliability physics symposium
64
2014
On the volatility of oxide defects: Activation, deactivation, and transformation
T. Grasser , M. Waltl , W. Goes , Y. Wimmer
international reliability physics symposium 5
31
2015
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors
Yu. Yu. Illarionov , M. Waltl , A.D. Smith , S. Vaziri
international reliability physics symposium 2
1
2015
The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealing
T. Grasser , M. Waltl , G. Rzepa , W. Goes
2016 IEEE International Reliability Physics Symposium (IRPS)
23
2016
Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors
Yu. Yu. Illarionov , M. Waltl , A.D. Smith , S. Vaziri
joint international eurosoi workshop and international conference on ultimate integration on silicon 81 -84
2
2015
Evidence for defect pairs in SiON pMOSFETs
T. Grasser , K. Rott , H. Reisinger , M. Waltl
international symposium on the physical and failure analysis of integrated circuits 258 -263
2014
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
T. Grasser , K. Rott , H. Reisinger , M. Waltl
international electron devices meeting
32
2013
On the microscopic structure of hole traps in pMOSFETs
T. Grasser , W. Goes , Y. Wimmer , F. Schanovsky
international electron devices meeting
64
2014
Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes
T. Grasser , M. Waltl , Y. Wimmer , W. Goes
international electron devices meeting 2015 535 -538
27
2015