Highly-stable black phosphorus field-effect transistors with low density of oxide traps
作者： Yu. Yu. Illarionov , M. Waltl , G. Rzepa , T. Knobloch , J.-S. Kim
DOI: 10.1038/S41699-017-0025-3
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摘要: … 1c, we show the gate transfer (I d − V g ) characteristics measured at different stages of our long-term study. Remarkably, some drifts are observed only after several months of intensive …
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