Carrier injection and light emission in visible and UV nitride LEDs by modeling
S. Yu. Karpov , K. A. Bulashevich , I. A. Zhmakin , V. O. Nestoklon
Physica Status Solidi B-basic Solid State Physics 241 ( 12) 2668 -2671
18
2004
Tight-binding description of inorganic lead halide perovskites in cubic phase
M.O. Nestoklon
Computational Materials Science 196 110535
2021
Weak localization of two-dimensional Dirac fermions beyond the diffusion regime
M.O. Nestoklon , N.S. Averkiev , S.A. Tarasenko
Solid State Communications 151 ( 21) 1550 -1553
16
2011
Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix
M.S. Mukhin , Ya.V. Terent'ev , L.E. Golub , M.O. Nestoklon
Acta Physica Polonica A 120 ( 5) 868 -869
1
2011
HOLE STATES LOCALIZED AT TYPE II HETEROINTERFACE
M. O. NESTOKLON
International Journal of Nanoscience 02 ( 06) 411 -417
3
2003
Tight binding simulations in III-V structures on Si
Charles Cornet , Jacky Even , M. Nestoklon , Jean-Marc Jancu
International Workshop "Silicon & Photonics"
2013
Structural, electronic properties and carrier dynamics in InGaAs(N)/GaP quantum dots
Laurent Pedesseau , Charles Cornet , Samy Almosni , Xavier Marie
18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015)
2015
Lateral optical anisotropy of type-II interfaces in the tight-binding approach
E. Ivchenko , M. Nestoklon
Physical Review B 70 ( 23) 235332
13
2004
Strongly temperature dependent resistance of meander-patterned graphene
R. J. Haug , Yu B. Vasilyev , G. Yu Vasileva , İsmet İnönü Kaya
Applied Physics Letters 110 ( 11) 113104
1
2017
Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach
P. Voisin , M. O. Nestoklon , H. Jaffrès , O. Krebs
Applied Physics Letters 100 ( 6) 062403
5
2012
Electron density effect on spin-orbit interaction in [001] GaAs quantum wells
M. O. Nestoklon , P. S. Alekseev
Physical Review B 103 ( 19)
2021
Electric field effect on electron spin splitting in SiGe/Si quantum wells
M. O. Nestoklon , E. L. Ivchenko , J.-M. Jancu , P. Voisin
Physical Review B 77 ( 15) 155328
68
2008
Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces
S. A. Tarasenko , M. V. Durnev , M. O. Nestoklon , E. L. Ivchenko
Physical Review B 91 ( 8) 081302
64
2015
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
I. A. Eliseyev , V. Yu. Davydov , A. N. Smirnov , M. O. Nestoklon
Semiconductors 53 ( 14) 1904 -1909
2
2019
Microscopic theory of resistance anomalous temperature behavior in graphene
M. O. Nestoklon , N. S. Averkiev
EPL 101 ( 4) 47006
5
2013
Tensile-strained GaAs quantum wells and quantum dots in aGaAsxSb1−xmatrix
A. A. Toropov , O. G. Lyublinskaya , B. Ya. Meltser , V. A. Solov’ev
Physical Review B 70 ( 20) 205314
12
2004
Spin and valley-orbit splittings in Si Ge ∕ Si heterostructures
M. O. Nestoklon , L. E. Golub , E. L. Ivchenko
Physical Review B 73 ( 23) 235334
85
2006
Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures
Ya. V. Terent'ev , M. S. Mukhin , A. A. Toropov , M. O. Nestoklon
Physical Review B 87 ( 4) 045315
7
2013
Electronic, optical, and structural properties of (In,Ga)As/GaP quantum dots
C. Robert , C. Cornet , P. Turban , T. Nguyen Thanh
Physical Review B 86 ( 20) 205316
47
2012
Erratum: Effective one-band approach for the spin splittings in quantum wells [Phys. Rev. B 95 , 125303 (2017)]
P. S. Alekseev , M. O. Nestoklon
Physical Review B 102 ( 23) 239902
1
2020