Strongly temperature dependent resistance of meander-patterned graphene
作者： R. J. Haug , Yu B. Vasilyev , G. Yu Vasileva , İsmet İnönü Kaya , M. O. Nestoklon
DOI: 10.1063/1.4978597
关键词:
摘要: We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with length up to few centimeters and width tens microns. These samples show pronounced dependence resistance on temperature. Accurate comparison theory shows that this temperature originates from weak localization effect observed over broad range 1.5 K 77 K. The allows us estimate characteristic times related quantum interference. In addition, large enhancement is at Hall regime near filling factor 2. Record high its strong are favorable for construction bolometric photodetectors.
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