Server-based generation of user interfaces for delivery to mobile communication devices
Trey Harvin , Ronan Cremin , John Leonard
2020
Nonpolar GaN-based vertical-cavity surface-emitting lasers
Benjamin P. Yonkee , John T. Leonard , Shuji Nakamura , Robert M. Farrell
international semiconductor laser conference
1
2016
Towards III-nitride photonic IC: a new platform for smart lighting and visible light communication
Chao Shen , Tien Khee Ng , Yujian Guo , Changmin Lee
2017
GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs
Chao Shen , John T. Leonard , Erin C. Young , Tien Khee Ng
conference on lasers and electro optics
4
2016
Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser
SeungGeun Lee , Saadat Mishkat-Ul-Masabih , John T. Leonard , Daniel F. Feezell
Applied Physics Express 10 ( 1) 011001
31
2017
GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition
SeungGeun Lee , Charles A. Forman , Changmin Lee , Jared Kearns
Applied Physics Express 11 ( 6) 062703
67
2018
Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers
Seung Geun Lee , Jared Kearns , Steven P. DenBaars , Charles A. Forman
Gallium Nitride Materials and Devices XIII 10532
4
2018
Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions
Ludovico Megalini , Leah Y. Kuritzky , John T. Leonard , Renuka Shenoy
Applied Physics Express 8 ( 6) 066502
5
2015
High-Modulation-Efficiency, Integrated Waveguide Modulator–Laser Diode at 448 nm
Chao Shen , Tien Khee Ng , John T. Leonard , Arash Pourhashemi
ACS Photonics 3 ( 2) 262 -268
74
2016
Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts.
SeungGeun Lee , Charles A. Forman , Jared Kearns , John T. Leonard
Optics Express 27 ( 22) 31621 -31628
10
2019
Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact.
Benjamin P. Yonkee , Erin C. Young , Changmin Lee , John T. Leonard
Optics Express 24 ( 7) 7816 -7822
76
2016
Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact
Charles A. Forman , SeungGeun Lee , Erin C. Young , Jared A. Kearns
Applied Physics Letters 112 ( 11) 111106
55
2018
Hybrid MOCVD/MBE GaN tunnel junction LEDs with greater than 70% wall plug efficiency
Benjamin P. Yonkee , Erin C. Young , John T. Leonard , Changmin Lee
international conference on indium phosphide and related materials 1 -1
1
2016
Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
Chao Shen , Tien Khee Ng , Changmin Lee , John T. Leonard
Gallium Nitride Materials and Devices XII 10104
9
2017
Demonstration of low resistance ohmic contacts to p-type (202̄1̄) GaN
Benjamin P Yonkee , Robert M Farrell , John T Leonard , Steven P DenBaars
Semiconductor Science and Technology 30 ( 7) 075007
12
2015
High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications
Chao Shen , Tien Khee Ng , John T Leonard , Arash Pourhashemi
Optics Letters 41 ( 11) 2608 -2611
65
2016
Hybrid growth method for III-nitride tunnel junction devices
Erin C Young , Benjamin P Yonkee , John T Leonard , Tal Margalith
8
2022
III-nitride tunnel junction with modified PN interface
Benjamin P Yonkee , Erin C Young , John T Leonard , Tal Margalith
7
2020
A violet III-nitride vertical-cavity surface-emitting laser with a MOCVD-grown tunnel junction contact
SeungGeun Lee , Charles A Forman , Changmin Lee , Jared Kearns
CLEO: Science and Innovations SF1G. 7 -SF1G. 7
2018
Flip-chip blue LEDs grown on bulk GaN substrates utilizing photoelectrochemical etching for substrate removal
Benjamin P Yonkee , Burhan SaifAddin , John T Leonard , Steven P DenBaars
Applied Physics Express 9 ( 5) 056502 -056502
12
2016