引用次数
引用: 4,904
H-指数: 37
I10-指数 : 118
出版物: 288
Numerical Simulation Model Development and Comparative Analysis of Low-voltage SiC BJT for Compact Modeling
Arman Ur Rashid , Md Maksudul Hossain , Sajib Roy , Alex Metreveli
ieee workshop on wide bandgap power devices and applications 2019 137 -142
2019
Formation and high frequency CV-measurements of aluminum/aluminum nitride/6H silicon carbide structures
C. -M. Zetterling , K. Wongchotigul , M. G. Spencer , C. I. Harris
MRS Proceedings 423 667 -672
12
1996
Effect of UV light irradiation on SiC dry etch rates
P. Leerungnawarat , H. Cho , S. J. Pearton , C. -M. Zetterling
Journal of Electronic Materials 29 ( 3) 342 -346
9
2000
Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky Diode characterization
E. Danielsson , S. -K. Lee , C. -M. Zetterling , M. Östling
Journal of Electronic Materials 30 ( 3) 247 -252
40
2001
Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide
S. -K. Lee , C. -M. Zetterling , M. Östling
Journal of Electronic Materials 30 ( 3) 242 -246
35
2001
Ohmic contact formation on inductively coupled plasma etched 4H-Silicon carbide
S. -K. Lee , S. -M. Koo , C. -M. Zetterling , M. Östling
Journal of Electronic Materials 31 ( 5) 340 -345
9
2002
Plasma chemistries for high density plasma etching of SiC
J. Hong , R. J. Shul , L. Zhang , L. F. Lester
Journal of Electronic Materials 28 ( 3) 196 -201
37
1999
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
E Danielsson , C.-M Zetterling , M Östling , B Breitholtz
Materials Science and Engineering B-advanced Functional Solid-state Materials 320 -324
10
1999
Low resistivity ohmic contacts on 4H-Silicon carbide for high power and high temperature device applications
S-K Lee , C-M Zetterling , Mikael Östling , J-P Palmquist
Microelectronic Engineering 60 ( 1) 261 -268
33
2002
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
S.-K Lee , C.-M Zetterling , M Östling , I Åberg
Solid-state Electronics 46 ( 9) 1433 -1440
79
2002
Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide
C.-M Zetterling , M Östling , J.-P Palmquist , H Högberg
Solid-state Electronics 44 ( 7) 1179 -1186
43
2000
Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide
S.-M Koo , S.-K Lee , C.-M Zetterling , M Östling
Solid-state Electronics 46 ( 9) 1375 -1380
16
2002
High rate etching of SiC and SiCN in NF3 inductively coupled plasmas
J.J Wang , E.S Lambers , S.J Pearton , M Ostling
Solid-state Electronics 42 ( 5) 743 -747
24
1998
ICP etching of SiC
J.J Wang , E.S Lambers , S.J Pearton , M Ostling
Solid-state Electronics 42 ( 12) 2283 -2288
65
1998
Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation
R Ghandi , B Buono , C.-M Zetterling , M Domeij
IEEE Electron Device Letters 32 ( 5) 596 -598
8
2011
Thermal oxidation of n- and p-type 6H-silicon carbide
C -M Zetterling , M Östling
Physica Scripta 1994 291 -293
9
1994
Simultaneous study of nickel based ohmic contacts to Si-face and C-face of n-type silicon carbide
R. Ghandi , H-S. Lee , M. Domeij , C-M. Zetterling
international semiconductor device research symposium 1 -1
2007
Influence of crystal orientation on the current gain in 4H-SiC BJTs
R. Ghandi , B. Bouno , M. Domeij , S. Shayestehaminzadeh
device research conference 131 -132
2010
SiC bipolar devices for high power and integrated drivers
M. Ostling , R. Ghandi , B. Buono , L. Lanni
bipolar/bicmos circuits and technology meeting 227 -234
4
2011
Plasma Chemistries for High Density Plasma Etching of SiC
H Cho , YB Hahn , DA Hays , J Hong
Journal of Electronic Materials ( SAND98-2513J)
1998