Effect of UV light irradiation on SiC dry etch rates
作者： P. Leerungnawarat , H. Cho , S. J. Pearton , C. -M. Zetterling , M. Ostling
DOI: 10.1007/S11664-000-0074-8
关键词: Surface finish 、 Ultraviolet 、 Inductively coupled plasma 、 Etching (microfabrication) 、 Plasma etching 、 Analytical chemistry 、 Semiconductor 、 Kinetics 、 Chemistry 、 Dry etching 、 Electrical and Electronic Engineering 、 Materials Chemistry 、 Electronic, Optical and Magnetic Materials 、 Condensed matter physics
摘要: Inductively Coupled Plasma etching of 4H-SiC under ultraviolet illumination was examined for SF6/Ar and Cl-2/Ar chemistries. Etch rate enhancements up to a factor 8 were observed with UV light i ...
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