Thaddeus J. Asel
机构: Air Force Research Laboratory
每年引用次数
引用次数
引用: 881
H-指数: 13
I10-指数 : 15
出版物: 37
Surface relaxation and rumpling of Sn-doped β -Ga 2 O 3 (010 )
A. Pancotti , T. C. Back , W. Hamouda , M. Lachheb
Physical Review B 102 ( 24) 245306
2020
2020 Index IEEE Electron Device Letters Vol. 41
HN Abbasi , R Abdolvand , K Abe , A Abliz
IEEE Electron Device Letters 41 ( 12)
2020
Influence of nitride buffer layers on superconducting properties of niobium nitride
John H Goldsmith , Ricky Gibson , Tim Cooper , Thaddeus J Asel
Journal of Vacuum Science and Technology 36 ( 6) 061502
2
2018
Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time
Katie R Gann , Naomi Pieczulewski , Cameron A Gorsak , Karen Heinselman
Journal of Applied Physics 135 ( 1)
4
2024
Epitaxial growth of α-(AlxGa1− x) 2O3 by suboxide molecular-beam epitaxy at 1 µm/h
Jacob Steele , Kathy Azizie , Naomi Pieczulewski , Yunjo Kim
APL Materials 12 ( 4)
2024
$\gamma $-phase Inclusions as Common Defects in Alloyed $\beta $-(Al $ _x $ Ga $ _ {1\text {-} x} $) $ _2 $ O $ _3 $ and Doped $\beta $-Ga $ _2 $ O $ _3 $ Films
Celesta S Chang , Nicholas Tanen , Vladimir Protasenko , Thaddeus J Asel
arXiv preprint arXiv:2012.00263
2020
Admittance spectroscopy study of defects in beta-Ga 2 O 3
Jian V Li , Jessica Hendricks , Adam Charnas , Brenton A Noesges
THIN SOLID FILMS 789
2024
Admittance spectroscopy study of defects in β-Ga2O3
Jian V Li , Jessica Hendricks , Adam Charnas , Brenton A Noesges
Thin Solid Films 789 140196 -140196
2024
Delta Doping β-Ga2O3 Grown Via Plasma Assisted Molecular Beam Epitaxy Using Germanium
Thaddeus J Asel , Erich Steinbrunner , Jessica Hendricks , Adam T Neal
Identification of Ge vacancies as electronic defects in methyl- and hydrogen-terminated germanane
Thaddeus J Asel , Eric Yanchenko , Xiao Yang , Shishi Jiang
Applied Physics Letters 113 ( 6) 061110
6
2018
Native point defect formation in flash sintered ZnO studied by depth-resolved cathodoluminescence spectroscopy
Hantian Gao , Thaddeus J Asel , Jon W Cox , Yuanyao Zhang
Journal of Applied Physics 120 ( 10) 105302
19
2016
Nanoscale Characterization of Defects in Complex Oxides and Germanane
Thaddeus J Asel
The Ohio State University
2018
Tailoring the Electronic Structure of Covalently Functionalized Germanane via the Interplay of Ligand Strain and Electronegativity
Shishi Jiang , Kevin Krymowski , Thaddeus Asel , Maxx Q. Arguilla
Chemistry of Materials 28 ( 21) 8071 -8077
28
2016
Optical signatures of deep level defects in Ga2O3
Hantian Gao , Shreyas Muralidharan , Nicholas Pronin , Md Rezaul Karim
Applied Physics Letters 112 ( 24) 242102
117
2018
Toward high voltage radio frequency devices in β-Ga2O3
Neil Moser , Kyle Liddy , Ahmad Islam , Nicholas Miller
Applied Physics Letters 117 ( 24) 242101
1
2020
Device-Level Impact of Highly Anisotropic Thermal Conductivity of AlN/GaN Digital Alloys
Henry Tyler Aller , Alexander Chaney , Thomas Pfeifer , Kent Averett
Electrochemical Society Meeting Abstracts 242 ( 34) 1246 -1246
2022
Lateral β-Ga2O3 field effect transistors
Kelson D Chabak , Kevin D Leedy , Andrew J Green , Shin Mou
Semiconductor Science and Technology 35 ( 1) 013002 -013002
129
2019
High-Temperature Electronics Using $\beta {-} $ Ga203 FETs and AIGaN/GaN HEMTs
Ahmad E Islam , Matt Grupen , Gary Hughes , Andreas Popp
NAECON 2023-IEEE National Aerospace and Electronics Conference 263 -268
2023
Gallium Oxide Process Development and Integration for Future RF and Power Switching Applications
Kelson Chabak , Kyle Liddy , Ahmad Islam , Neil Moser
Electrochemical Society Meeting Abstracts 240 ( 30) 908 -908
2021
Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor
Zhuoqun Wen , Xin Zhai , Cindy Lee , Stefan Kosanovic
Applied Physics Letters 124 ( 12)
2024