引用次数
引用: 3,174
H-指数: 24
I10-指数 : 33
出版物: 83
Improved contact resistance in ReSe2 thin film field-effect transistors
Chris M. Corbet , Sushant S. Sonde , Emanuel Tutuc , Sanjay K. Banerjee
Applied Physics Letters 108 ( 16) 162104 -162104
19
2016
Field effect transistors with current saturation and voltage gain in ultrathin ReS2.
Chris M. Corbet , Connor McClellan , Amritesh Rai , Sushant Sudam Sonde
ACS Nano 9 ( 1) 363 -370
183
2015
Viability of Post-Transition Metal As Anode for Nano-Ionic Resistive Switching Based Devices
Sushant Sudam Sonde , Bhaswar Chakrabarti , Kiran Sasikumar , Liliana Stan
Electrochemical Society Meeting Abstracts 232 ( 14) 824 -824
2017
Diode Analysis of Leakage Current in Advanced Substrate Material: Master Thesis, Electrical Engineering and Information Technology, Prof. Benstetter [Masterarbeit, Fachbereich Elektrotechnik und Medientechnik, Prof. Benstetter]
Sushant Sudam Sonde
Fachhochschule
2007
Characterization and sonochemical synthesis of black phosphorus from red phosphorus
Sandra H Aldave , Maruthi N Yogeesh , Weinan Zhu , Joonseok Kim
2D Materials 3 ( 1) 014007
49
2016
Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide
S Sonde , F Giannazzo , V Raineri , E Rimini
Journal of Vacuum Science & Technology B 27 ( 2) 868 -873
39
2009
Irradiation damage in graphene on SiO {sub 2} probed by local mobility measurements
F Giannazzo , S Sonde , V Raineri , E Rimini
Applied Physics Letters 95 ( 26)
45
2009
Origin and suppression of junction leakage in Germanium-On-Silicon structures
S Sonde , E Simoen , C Claeys , A Satta
ECS Transactions 6 ( 1) 31 -39
2
2007
Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas (vol 97, 132101, 2010)
S Sonde , F Giannazzo , C Vecchio , R Yakimova
APPLIED PHYSICS LETTERS 98 ( 6)
2011
Semiconductor Devices, Materials, and Processing-Processing Factors Impacting the Leakage Current and Flicker Noise of Germanium p+-n Junctions on Silicon Substrates
E Simoen , S Sonde , C Claeys , A Satta
Journal of the Electrochemical Society 155 ( 3) H145 -H145
2008
Compound Semiconductor Devices-Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p+/n Junctions
G Eneman , M Wiot , A Brugere , O Sicart
IEEE Transactions on Electron Devices 55 ( 9) 2287 -2287
2008
Integrating Phase-Change Memory Cell With Ge Nanowire Diode for Crosspoint Memory—Experimental Demonstration and Analysis.... S. Kim, Y. Zhang, JP McVittie, H. Jagannathan, Y. Nishi, and H.-SP Wong 2307 Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs................................................. Y. Yoon, G. Fiori, S. Hong, G. Iannaccone, and J. Guo 2314 Optoelectronics, Displays, and Imaging
Junctions G Eneman , M Wiot , A Brugere , O Sicart I Casain
Electrical properties of the graphene
S SONDE , F GIANNAZZO , V RAINERI , R YAKIMOVA
Physical review B. Condensed matter and materials physics 80 ( 24)
2009
On the origin of the 1
RM TODI , S SONDE , E SIMOEN , C CLAEYS
Applied physics letters 90 ( 4)
2007
Growth of topological insulators on Si(111)-(7$\times$7) surfaces by molecular beam epitaxy
Sanjay Banerjee , Sushant Sonde , Anupam Roy , Samaresh Guchhait
Bulletin of the American Physical Society 2013
2013
Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions
Emanuel Tutuc , Hema C. P. Movva , Chris M. Corbet , Gary Carpenter
Applied Physics Letters 101 ( 18) 183113
24
2012
Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene
Filippo Giannazzo , Sushant Sonde , Raffaella Lo Nigro , Emanuele Rimini
Nano Letters 11 ( 11) 4612 -4618
119
2011
Improved Cleaning Process for Textured ∼25 μm Flexible Mono-Crystalline Silicon Heterojunction Solar Cells with Metal Backing
Sayan Saha , Mohamed M. Hilali , Emmanuel U. Onyegam , Sushant Sonde
ECS Journal of Solid State Science and Technology 3 ( 7)
3
2014
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.
Amritesh Rai , Amithraj Valsaraj , Hema C.P. Movva , Anupam Roy
Nano Letters 15 ( 7) 4329 -4336
200
2015
Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators
Tanuj Trivedi , Sushant Sonde , Hema C. P. Movva , Sanjay K. Banerjee
Journal of Applied Physics 119 ( 5) 055706
16
2016