Magnetometer Data in the Classroom as a part of the NASA THEMIS Satellite Mission

L. M. Peticolas , J. Bean , A. Walker
AGU Fall Meeting Abstracts 2011

2011
Annealing of amorphous silicon with CW infrared lasers

G. Celler , J. Bean , W. Brown , J. Poate
IEEE Journal of Quantum Electronics 15 ( 9) 989 -990

1979
Microscopic Defects and Infrared Absorption in Cadmium Telluride

T. J. Magee , J. Peng , J. Bean
Physica Status Solidi (a) 27 ( 2) 557 -564

42
1975
ORDER-DISORDER TRANSITIONS IN STRAINED SEMICONDUCTOR SYSTEMS

A. OURMAZD , J. C. BEAN
MRS Proceedings 56

1985
The effect of two-temperature capping on germanium

Thomas E VANDERVELDE , KAI SUN , James L MERZ , Alan KUBIS
Journal of applied physics 99 ( 12)

2006
LATTICE RELAXATION IN THIN COMPOSITIONALLY-MODULATED SEMICONDUCTOR FILMS.

R. Hull , J. C. Bean , J. M. Gibson , M. M.J. Treacy
277 -281

1985
295
1986
GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 μm

H. Temkin , T. P. Pearsall , J. C. Bean , R. A. Logan
Applied Physics Letters 48 ( 15) 963 -965

187
1986
Stability of semiconductor strained‐layer superlattices

R. Hull , J. C. Bean , F. Cerdeira , A. T. Fiory
Applied Physics Letters 48 ( 1) 56 -58

145
1986
Power loss by two‐dimensional holes in coherently strained Ge0.2Si0.8/Si heterostructures: Evidence for weak screening

Y. H. Xie , R. People , J. C. Bean , K. W. Wecht
Applied Physics Letters 49 ( 5) 283 -285

31
1986
High photoconductive gain in GexSi1−x/Si strained-layer superlattice detectors operating at λ-1.3 μm

H. Temkin , J. C. Bean , T. P. Pearsall , N. A. Olsson
Applied Physics Letters 49 ( 3) 155 -157

30
1986
Trapping of oxygen at homoepitaxial Si‐Si interfaces

R. Hull , J. C. Bean , J. M. Gibson , D. C. Joy
Applied Physics Letters 49 ( 19) 1287 -1289

16
1986
Ge0.6Si0.4 rib waveguide avalanche photodetectors for 1.3 μm operation

H. Temkin , A. Antreasyan , N. A. Olsson , T. P. Pearsall
Applied Physics Letters 49 ( 13) 809 -811

109
1986
Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction

D. M. Maher , H. L. Fraser , C. J. Humphreys , R. V. Knoell
Applied Physics Letters 50 ( 10) 574 -576

31
1987
New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to Cu

R. Sauer , M. Asom , R. People , D. V. Lang
Applied Physics Letters 51 ( 15) 1185 -1187

4
1987
In situ observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures

R. Hull , J. C. Bean , D. J. Werder , R. E. Leibenguth
Applied Physics Letters 52 ( 19) 1605 -1607

120
1988
GexSi1−x strained‐layer heterostructure bipolar transistors

H. Temkin , J. C. Bean , A. Antreasyan , R. Leibenguth
Applied Physics Letters 52 ( 13) 1089 -1091

95
1988