引用次数
引用: 8,079
H-指数: 42
I10-指数 : 194
出版物: 528
Fabrication of GaN with buried tungsten (W) structures using epitaxial lateral overgrowth (ELO) via LP-MOVPE[Low Pressure Metal Organic Vapor Phase Epitaxy]
Masahiro Haino , Hideto Miyake , Motoo Yamaguchi
Materials Research Society, Warrendale, PA (US)
2000
Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask
Yasushi Iyechika , Atsushi Motogaito , Frank Bertram , Takayoshi Maeda
IEICE Transactions on Electronics 83 ( 4) 620 -626
3
2000
Phase Diagram of the CuGaS 2 –In Pseudobinary System
Koichi Sugiyama , Hideto Miyake
Japanese Journal of Applied Physics 29 ( 6)
1990
SOLUTION GROWTH OF CHALCOPYRITE COMPOUNDS CIGS SINGLE CRYSTAL
Akira Nagaoka , Kenji Yoshino , Hideto Miyake
AFORE 312 -312
2013
Surface treatment and homoepitaxial growth on AlN substrate
Hideto Miyake , Kazumasa Hiramatsu , Yoshinobu Watanabe , Yosuke Iwasaki
IEICE technical report. Component parts and materials 114 ( 57) 97 -100
2014
Power module concepts for innovative reliable nitride based power devices and applications - The EU public funded project ‘InRel-NPower‘-
Yoshihiro Kangawa , Gaudenzio Meneghesso , Kai Kriegel , Hideto Miyake
31st International Electric Vehicle Symposium and Exhibition, EVS 2018 and International Electric Vehicle Technology Conference 2018, EVTeC 2018
2018
Estimating efficiency of AlGaN light-emitting diodes with numerical simulations
Pawel Strak , Stanislaw Krukowski , Yoshihiro Kangawa , Motoaki Iwaya
Journal of the Japanese Association for Crystal Growth 47 ( 3)
2020
High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes
Hideto Miyake , Ding Wang , Shiyu Xiao , Kenjiro Uesugi
Applied Physics Express 14 ( 3) 035505
18
2021
Development of DUV-LED grown on high-temperature annealed AlN template
Kanako Shojiki , Hideto Miyake , Kenjiro Uesugi , Ding Wang
Gallium Nitride Materials and Devices XVI 11686
2021
Fabrication of high crystalline AlN/sapphire for deep UV-LED
Kanako Shojiki , Hideto Miyake , Shiyu Xiao , Kenjiro Uesugi
Gallium Nitride Materials and Devices XVI 11686
2021
Improvement of device performance in UV-B laser diodes
Satoshi Kamiyama , Isamu Akasaki , Isamu Akasaki , Motoaki Iwaya
Gallium Nitride Materials and Devices XVI 11686
2021
Analysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis
Daisuke Iida , Yoshihiro Ishitani , Kazuhiro Ohkawa , Bei Ma
Gallium Nitride Materials and Devices XVI 11686
2021
AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts
Joff Derluyn , Stefan Degroote , Yvon Cordier , Farid Medjdoub
Electronics 10 ( 6) 635
2021
Calculation of carrier injection efficiency of AlGaN UVB Laser Diode
Hideto Miyake , Kosuke Sato , Sho Iwayama , Kazuki Yamada
IEICE Technical Report; IEICE Tech. Rep. 120 ( 256) 9 -12
2020
AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate
Satoshi Kamiyama , Isamu Akasaki , Isamu Akasaki , Motoaki Iwaya
Applied Physics Express 14 ( 5) 055505
2021
AlGaN-based UV-B laser diode with a high optical confinement factor
Satoshi Kamiyama , Isamu Akasaki , Isamu Akasaki , Motoaki Iwaya
Applied Physics Letters 118 ( 16) 163504
24
2021
Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing
Haruhiko Koizumi , Hideto Miyake , Sho Iwayama , Ryoji Kataoka
IEICE Technical Report; IEICE Tech. Rep. 120 ( 256) 83 -86
2020
Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor
Kanako Shojiki , Hideto Miyake , Kenjiro Uesugi , Tatsuya Shirato
IEICE Technical Report; IEICE Tech. Rep. 120 ( 254) 41 -44
2020
Thick AlN layers grown on micro-scale patterned sapphire substrates with sputter-deposited annealed AlN films by hydride vapor-phase epitaxy
Kanako Shojiki , Hideto Miyake , Shiyu Xiao
Journal of Crystal Growth 126163
2021
Considering the Origin of Surface Plasmon Polaritons for a Surface Plasmon Sensor with 1D Metal Grating Structure and Characterization of Sensitivity
Hideto Miyake , Kazumasa Hiramatsu , Atsushi Motoagito , Yusuke Ito
JSAP-OSA Joint Symposia 2018 (2018), paper 19p_211B_14
2018