Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor

作者： Kanako Shojiki , Hideto Miyake , Kenjiro Uesugi , Tatsuya Shirato , Shigeyuki Kuboya

DOI:

关键词: Electron mobility 、 Flatness (systems theory) 、 Metalorganic vapour phase epitaxy 、 High-electron-mobility transistor 、 Materials science 、 Optoelectronics