Wootae Lee
机构: School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST)
主页: gist.ac.kr
每年引用次数
引用次数
引用: 3,365
H-指数: 31
I10-指数 : 46
出版物: 81
Motivation through behavior modification, part 2: Evaluation.
Lee We , Turner Aj
Health services manager 9 ( 10) 1 -4
4
1976
Multi-layer tunnel barrier (Ta 2 O 5 /TaO x /TiO 2 ) engineering for bipolar RRAM selector applications
Seonghyun Kim , Godeuni Choi , Euijun Cha , Sangsu Park
symposium on vlsi technology
3
2013
Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices
Xinjun Liu , Kuyyadi P. Biju , El Mostafa Bourim , Sangsu Park
Solid State Communications 150 ( 45) 2231 -2235
26
2010
Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature
Wootae Lee , Minseok Jo , Jubong Park , Joonmyoung Lee
Physica Status Solidi (a) 208 ( 1) 202 -205
3
2011
Analysis of interface switching for Nb doped SrTiO3 single crystal device using complex impedance spectroscopy
Joonmyoung Lee , El Mostafa Bourim , Dongku Shin , Jong-Sook Lee
Current Applied Physics 10 ( 1)
6
2010
Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications
Joonmyoung Lee , El Mostafa Bourim , Wootae Lee , Jubong Park
Applied Physics Letters 97 ( 17) 172105
167
2010
Forming-Free CuC-Buffer Oxide Resistive Switching Behavior with Improved Resistance Ratio
Seonghyun Kim , Minseok Jo , Jubong Park , Joonmyoung Lee
Electrochemical and Solid State Letters 14 ( 8)
5
2011
Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer
Sangsu Park , Seungjae Jung , Manzar Siddik , Minseok Jo
physica status solidi (RRL) - Rapid Research Letters 5 ( 10-11) 409 -411
15
2011
Investigation of power dissipation for ReRAM in crossbar array architecture
Wookyung Sun , Hyein Lim , Hyungsoon Shin , Wootae Lee
non volatile memory technology symposium 1 -4
2
2014
Cover Picture: Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen‐deficient layer (Phys. Status Solidi RRL 10–11/2011)
Sangsu Park , Seungjae Jung , Manzar Siddik , Minseok Jo
Physica Status Solidi-rapid Research Letters 5
2
2011
Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications
Sangsu Park , Seungjae Jung , Manzar Siddik , Minseok Jo
Physica Status Solidi-rapid Research Letters 6 ( 11) 454 -456
26
2012
Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes
Wootae Lee , Gunho Jo , Sangchul Lee , Jubong Park
Applied Physics Letters 98 ( 3) 032105
17
2011
TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application
Jungho Shin , Insung Kim , Kuyyadi P. Biju , Minseok Jo
Journal of Applied Physics 109 ( 3) 033712
161
2011
Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications
Jiyong Woo , Seonghyun Kim , Wootae Lee , Daeseok Lee
Applied Physics Letters 102 ( 12) 122115
10
2013
Diode-less nano-scale ZrO x /HfO x RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications
Joonmyoung Lee , Jungho Shin , Daeseok Lee , Wootae Lee
international electron devices meeting
124
2010
Thermally-assisted Ti/Pr 0.7 Ca 0.3 MnO 3 ReRAM with excellent switching speed and retention characteristics
Seungjae Jung , Manzar Siddik , Wootae Lee , Jubong Park
international electron devices meeting
13
2011
An electrically modifiable synapse array of resistive switching memory
Hyejung Choi , Heesoo Jung , Joonmyoung Lee , Jaesik Yoon
Nanotechnology 20 ( 34) 345201 -345201
128
2009
High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays
Seonghyun Kim , Jiyong Woo , Jungho Shin , Godeuni Choi
ACS Nano 6 ( 9) 8166 -8172
110
2012
Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications
Manzar Siddik , Seungjae Jung , Jubong Park , Wootae Lee
Applied Physics Letters 99 ( 6) 063501
13
2011
The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications
Joonmyoung Lee , Hyejung Choi , Dong-jun Seong , Jaesik Yoon
Microelectronic Engineering 86 ( 7) 1933 -1935
10
2009