Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer
作者： Sangsu Park , Seungjae Jung , Manzar Siddik , Minseok Jo , Joonmyoung Lee
关键词: Oxygen 、 Layer (electronics) 、 Optoelectronics 、 Layer thickness 、 Manganese oxide 、 Oxygen deficient 、 Materials science 、 Stoichiometry 、 Homogeneous 、 X-ray photoelectron spectroscopy 、 Nanotechnology
摘要: We propose a homogeneous nanoscaled (∅ 250 nm) bilayered Pr0.7Ca0.3MnO3 (PCMO)-based memory device that exhibits low power and good memristive switching behavior. Accurate control of the oxygen-deficient (PCMO3–x) layer thickness promotes oxygen migration between PCMO3–x stoichiometric PCMO (PCMO3). The structure was confirmed by X-ray photoelectron spectroscopy analysis. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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