作者: R. Dong , Q. Wang , L. D. Chen , D. S. Shang , T. L. Chen
DOI: 10.1063/1.1915529
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摘要: Materials showing reversible resistance switching at room temperature are attractive for today’s semiconductor technology with its wide interest in nonvolatile random access memories. In this letter, the retention behavior of electric-pulse-induced (EPIR) change effect Ag–La0.7Ca0.3MnO3–Pt sandwiches was demonstrated. The results suggest that property EPIR materials depends on both states and history, it can be modified using proper modes applied electric pulse.