Temperature dependence of current-voltage characteristics of Ag–La0.7Ca0.3MnO3–Pt heterostructures
作者： D. S. Shang , L. D. Chen , Q. Wang , W. Q. Zhang , Z. H. Wu
DOI: 10.1063/1.2364055
关键词:
摘要: Temperature dependence of the current-voltage characteristics Ag–La0.7Ca0.3MnO3–Pt heterostructures was investigated and related current conduction mechanism discussed. Poole-Frenkel emission trap-controlled space charge limited mechanisms are employed to explain carrier transport at low high temperature regions, respectively. Obvious hysteresis is observed only in region dominated by with traps exponentially distributed energy. This can be explained retention behavior trapped carriers Ag∕La0.7Ca0.3MnO3 interface layer. It proposed that resistance switching optimized for device application electrode/film defect engineering.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(27)
R. Dong, Q. Wang, L. D. Chen, D. S. Shang, T. L. Chen, X. M. Li, W. Q. Zhang, Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag–La0.7Ca0.3MnO3–Pt sandwiches Applied Physics Letters. ,vol. 86, pp. 172107- ,(2005) , 10.1063/1.1915529
A. Baikalov, S. Tsui, Y. Y. Sun, Y. Y. Xue, Y. Q. Wang, B. Shen, C. W. Chu, B. Lorenz, Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface Applied Physics Letters. ,vol. 83, pp. 957- 959 ,(2003) , 10.1063/1.1590741
A. Baikalov, J. Cmaidalka, S. Tsui, L. Chen, Y. Y. Sun, Y. Y. Xue, C. W. Chu, A. J. Jacobson, Y. Q. Wang, Field-induced resistive switching in metal-oxide interfaces Applied Physics Letters. ,vol. 85, pp. 317- 319 ,(2004) , 10.1063/1.1768305
Takashi Oka, Naoto Nagaosa, Interfaces of Correlated Electron Systems: Proposed Mechanism for Colossal Electroresistance Physical Review Letters. ,vol. 95, pp. 266403- ,(2005) , 10.1103/PHYSREVLETT.95.266403
S. C. Jain, Ashok. K. Kapoor, Wim Geens, J. Poortmans, R. Mertens, M. Willander, Trap filled limit of conducting organic materials Journal of Applied Physics. ,vol. 92, pp. 3752- 3754 ,(2002) , 10.1063/1.1503863
Anirban Bandyopadhyay, Amlan J. Pal, Large conductance switching and memory effects in organic molecules for data-storage applications Applied Physics Letters. ,vol. 82, pp. 1215- 1217 ,(2003) , 10.1063/1.1555263
M. J. Rozenberg, I. H. Inoue, M. J. Sánchez, Nonvolatile Memory with Multilevel Switching: A Basic Model Physical Review Letters. ,vol. 92, pp. 178302- ,(2004) , 10.1103/PHYSREVLETT.92.178302
H. L. Ju, J. Gopalakrishnan, J. L. Peng, Qi Li, G. C. Xiong, T. Venkatesan, R. L. Greene, Dependence of giant magnetoresistance on oxygen stoichiometry and magnetization in polycrystalline La0.67Ba0.33MnOz Physical Review B. ,vol. 51, pp. 6143- 6146 ,(1995) , 10.1103/PHYSREVB.51.6143
S. Q. Liu, N. J. Wu, A. Ignatiev, Electric-pulse-induced reversible resistance change effect in magnetoresistive films Applied Physics Letters. ,vol. 76, pp. 2749- 2751 ,(2000) , 10.1063/1.126464
A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura, Interface resistance switching at a few nanometer thick perovskite manganite active layers Applied Physics Letters. ,vol. 88, pp. 232112- ,(2006) , 10.1063/1.2211147