Electronic transport in (La,Sr)MnO3-ferroelectric-(La,Sr)MnO3 epitaxial structures

作者: A.G. Boni , I Pintilie , L Pintilie , M Preziosi , D

DOI: 10.1063/1.4808335

关键词: Analytical chemistryLeakage (electronics)VoltageEpitaxyThermionic emissionFerroelectricitySpace chargeMaterials scienceOxideCondensed matter physicsThermal conduction

摘要: The leakage current in all oxide epitaxial (La,Sr)MnO3-ferroelectric-(La,Sr)MnO3 structures, where the ferroelectric layer is either BaTiO3 or Pb(Zr0.2Ti0.8)O3, was analyzed on a broad range of temperatures and for different thicknesses layer. It found that, although structures are nominally symmetric, current-voltage (I–V) characteristics asymmetric. depends strongly layer, temperature polarity applied voltage. Simple conduction mechanisms such as space charge limited currents thermionic emission cannot explain same time voltage, temperature, thickness dependence experimentally measured currents. A combination between interface injection bulk controlled drift-diffusion (through hopping case BTO through band mobility PZT) qualitatively explaining experimental I–V characteristics.

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