Temperature dependence of the conduction mechanisms through a Pb(Zr,Ti)O3 thin film
作者： C. Jégou , L. Michalas , T. Maroutian , G. Agnus , M. Koutsoureli
DOI: 10.1016/J.TSF.2013.12.043
关键词:
摘要: Abstract The conduction mechanisms through a lead zirconate titanate (PZT) thin film grown by pulsed laser deposition with La 0.67 Sr 0.33 MnO 3 (LSMO) buffer layer on epitaxial Pt (111) were assessed in the 230–330 K temperature range. X-Ray diffraction and transmission electron microscopy evidenced columnar growth of (001)- (011)-oriented PZT grains. leakage current Pt/PZT/LSMO/Pt structure was then systematically measured. From vs. time curves, threshold voltage found below which stable reproducible values are obtained, thus avoiding resistance degradation. mechanism changes from interface controlled at low temperatures to bulk around room temperature. hopping-type conductivity above 270 K is consistent extended defects microstructure film.
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