Study on Nonvolatile Memory Based on Electric‐Pulse‐Induced Reversible Resistance Change Effect

作者: Qun Wang , Lidong Chen , Rui Dong , Dashan Shang , Xiaomin Li

DOI: 10.1002/9781118144121.CH52

关键词: Field emission scanning electron microscopyMaterials scienceNanotechnologyElectric pulseNon-volatile memory

摘要:

参考文章(15)
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