David Tremouilles
机构: CNRS research Fellow, LAAS University of Toulouse
每年引用次数
引用次数
引用: 1,444
H-指数: 20
I10-指数 : 43
出版物: 113
Design guidelines to achieve a very high ESD robustness in a self-biased NPN
Tremouilles , Lescouzeres , Bafleur , Nolhier
electrical overstress/electrostatic discharge symposium 284 -291
12
2002
Temperature dependence of ESD charging in RF MEMS capacitive switch
Coccetti , Papaioannou , Plana , Tremouilles
european microwave conference 1756 -1759
2009
Design methodology of FinFET devices that meet IC-Level HBM ESD targets
Groeseneken , Sawada , Scholz , Nakaei
electrical overstress electrostatic discharge symposium 294 -302
2008
High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power SOI technology
Arbess , Tremouilles , Bafleur
EOS/ESD Symposium Proceedings 1 -8
2011
Investigation of statistical tools to analyze repetitive HMM stress endurance of system-level ESD protection
Bouyssou , Bafleur , Tremouilles , Diatta
EOS/ESD Symposium Proceedings 1 -9
2011
Solving ESD protection latch-up guard ring issues during electrostatic discharge (ESD) events
Tremouilles , Bafleur , Bertrand , Nolhier
bipolar/bicmos circuits and technology meeting 133 -136
2
2003
SPECIAL SECTION ON 2011 PAPERS FROM THE SYMPOSIUM ON ELECTRICAL OVERSTRESS AND ELECTROSTATIC DISCHARGE EFFECTS
SH Chen , A Griffoni , P Srivastava , D Linten
COMPOSANTS ET INTEGRATION DE PUISSANCE (CIP)
M Bafleur DR , M Breil CR , JL Sanchez DR , H Tranduc
SPECIAL SECTION ON 2011 PAPERS FROM THE SYMPOSIUM ON ELECTRICAL OVERSTRESS AND ELECTROSTATIC DISCHARGE EFFECTS
SH Chen , A Griffoni , P Srivastava , D Linten
29
2012
Design methodology for MuGFET ESD protection devices
Steven Thijs , Dimitri Linten , David Eric Trémouilles
196
2011
Method for calibrating an electrostatic discharge tester
Mirko Scholz , David Eric Tremouilles , Steven Thijs , Dimitri Linten
9
2010
Bidirectional ESD Power Clamp
Dimitri Linten , Steven Thijs , David Eric Tremouilles , Natarajan Mahadeva Iyer
5
2010
Fast Triggering ESD Protection Device and Method for Designing Same
Steven Thijs , David Eric Tremouilles
6
2009
Method of measuring characteristic impedance of electrostatic discharge protecting circuit and apparatus for realizing the same
Toshiyuki Nakaie , Masanori Sawada , Taizo Shintani , Natarajan Mahadeva Iyer
4
2009
Low Frequency Noise Measurements for ESD Latent Defect
N Guitarda , D Trémouillesa , M Bafleura , L Escottea
Microelectronics Reliability 44 1781 -1786
16
2004
Electrostatic Discharge Reliability
D LINTEN , S THIJS , J BORREMANS , M DEHAN
Microelectronics and reliability 49 ( 12) 1440 -1446
2009
Robustesse de MESFET SiC face aux décharges électrostatiques
Tanguy Phulpin , David Trémouilles , Karine Isoird , Patrick Austin
SGE Symposium de Génie Electrique
2016
Mesure de résistance dynamique de HEMT en GaN à l'échelle de la centaine de nanosecondes
Gaetan Toulon , Karine Isoird , Mathieu Gavelle , Emmanuel Marcault
Symposium de Genie Electrique
2016
Protection ESD pour MESFET SiC
Karine Isoird , Patrick Austin , David Trémouilles , Tanguy Phulpin
Journées Intégration et Systèmes de Puissance 3D (ISP3D)
2015
Analyse du mécanisme d'un défaut ESD sur un MESFET en SiC
Karine Isoird , Patrick Austin , David Trémouilles , Philippe Godignon
Journées Nationales du Réseau de Doctorants en Microélectronique
2015
Steven Thijs Marise BAFLEUR Dimitri Linten Guido Groeseneken Mirko Scholz Natarajan Iyer caignet Vincent Mortet Frédéric RICHARDEAU Andrew Taylor Patrick Austin Harald Gossner Robert PLANA Gaudenzio Meneghesso Otakar Frank George Papaioannou Dominique Tournier Jonathan Borremans Chaudret Bruno Soltani Ali