Raouf Bennaceur
机构: Universite Tunis El Manar
每年引用次数
引用次数
引用: 2,337
H-指数: 28
I10-指数 : 49
出版物: 185
Self-consistent quasiparticle random phase approximation for the description of superfluid Fermi systems
A. Rabhi , R. Bennaceur , G. Chanfray , P. Schuck
Physical Review C 66 ( 6) 064315
17
2002
RETRACTED ARTICLE: Cooperative Time-Reversal Symmetry Breaking Induced by a Magnetic Field in a Quasi-2D d-Wave Superconductor
S. Char fi-Kaddour , A. Ben Ali , M. Héritier , R. Bennaceur
Journal of Superconductivity and Novel Magnetism 14 ( 2) 317 -324
2001
Multiscale Modelization of Multilayered Bi-Dimensional Soils
L. Bennaceur Farah , I. Hosni , R Bennaceur , N. Saber
International Journal of Computer and Information Engineering 12 ( 11) 963 -980
2018
Soliton propagation in an absorbing three-level atomic system
H Eleuch , D Elser , R Bennaceur
Laser Physics Letters 1 ( 8) 391 -396
11
2004
Improvement of transport parameters in solar grade monocrystalline silicon by application of a sacrificial porous silicon layer
N Khedher , M Hajji , M Bouaı̈cha , M.F Boujmil
Solid State Communications 123 ( 1) 7 -10
34
2002
Morphological changes in porous silicon nanostructures: non-conventional photoluminescence shifts and correlation with optical absorption
B Bessaı̈s , O Ben Younes , H Ezzaouia , N Mliki
Journal of Luminescence 90 ( 3) 101 -109
27
2000
Technological, structural and morphological aspects of screen-printed ITO used in ITO/Si type structure
B Bessais , N Mliki , R Bennaceur
Semiconductor Science and Technology 8 ( 1) 116 -121
25
1993
Centre-of-mass quantization of excitons in GaAs quantum boxes
S Jaziri , G Bastard , R Bennaceur
Semiconductor Science and Technology 8 ( 5) 670 -674
7
1993
Electrical behaviour and optical properties of screen-printed ITO thin films
B Bessais , H Ezzaouia , R Bennaceur
Semiconductor Science and Technology 8 ( 8) 1671 -1678
19
1993
Excitons in parabolic quantum dots in electric and magnetic fields
S Jaziri , R Bennaceur
Semiconductor Science and Technology 9 ( 10) 1775 -1780
26
1994
Thermodynamic equilibrium of screened exciton system by electron-hole plasma in the two-dimensional structure
N Ben Brahim Aouani , L Mandhour , R Bennaceur , S Jaziri
Solid State Communications 108 ( 4) 199 -204
16
1998
On the electro-optic effects of the absorption edge of SbSI
K Nakao , R Bennaceur , M Balkanski
Physics Letters A 41 ( 3) 219 -220
4
1972
The self-consistent band structure of PtS2 obtained by the linear muffin-tin orbital method in the atomic sphere approximation
C Mankai , R Bennaceur
Journal of Physics C: Solid State Physics 21 ( 28) 4979 -4988
1
1988
Formation of porous silicon for large-area silicon solar cells: A new method
M Saadoun , H Ezzaouia , B Bessaı̈s , M.F Boujmil
Solar Energy Materials and Solar Cells 59 ( 4) 377 -385
33
1999
Correlation of photoluminescence spectra and structure of porous silicon
B Bessaïs , H Ezzaouia , H Elhouichet , M Oueslati
Semiconductor Science and Technology 11 ( 12) 1815 -1820
25
1996
Confined exciton-polaritons in parabolic and Gaussian quantum wells
H Fenniche , L Mandhour , S Jaziri , R Bennaceur
Semiconductor Science and Technology 12 ( 7) 796 -801
5
1997
Porous silicon-based passivation and gettering in polycrystalline silicon solar cells
W Dimassi , M Bouaı̈cha , M Saâdoun , B Bessaı̈s
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 186 ( 1) 441 -445
19
2002
Structural, optical and electrical properties of SnO2:F and CdS airless sprayed layers
M Amlouk , M Dachraoui , S Belgacem , R Bennaceur
Solar Energy Materials 15 ( 6) 453 -461
20
1987
New symmetry breaking in high Tc superconductors
S Charfi-Kaddour , A Ben Ali , M Héritier , R Bennaceur
Physica B: Condensed Matter 259-261 489 -491
1999
Vapour-etching-based porous silicon: a new approach
M Saadoun , N Mliki , H Kaabi , K Daoudi
Thin Solid Films 405 ( 1) 29 -34
79
2002