Sergio Fernández-Garrido
机构: Associate Professor in Materials Science and ERC-CoG Grantee at Universidad Politécnica de Madrid
主页: upm.es
每年引用次数
引用次数
引用: 3,678
H-指数: 33
I10-指数 : 64
出版物: 168
Photoluminescence enhancement in quaternary. III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
S. Fernández-Garrido , J. Pereiro , F. González-Posada , E. Muñoz
Journal of Applied Physics 103 ( 4) 046104
13
2008
Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks
E. Calleja , J. Ristić , S. Fernández-Garrido , L. Cerutti
Physica Status Solidi B-basic Solid State Physics 244 ( 8) 2816 -2837
140
2007
Electron spin dynamics in mesoscopic GaN nanowires
JH Buß , S Fernández-Garrido , O Brandt , D Hägele
Applied Physics Letters 114 ( 9) 092406
5
2019
Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport.
S Fernández-Garrido , C Pisador , J Lähnemann , S Lazić
Nanotechnology 31 ( 47) 475603
1
2020
Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils.
G Calabrese , S V Pettersen , C Pfüller , M Ramsteiner
Nanotechnology 28 ( 42) 425602
19
2017
(V)EELS Characterization of InAlN/GaN Distributed Bragg Reflectors
A Eljarrat , Ž Gačević , S Fernández-Garrido , E Calleja
Journal of Physics: Conference Series 326 ( 1) 012014
3
2011
Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling
A Redondo-Cubero , K Lorenz , N Franco , S Fernández-Garrido
Journal of Physics D 42 ( 6) 065420
6
2009
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process.
J K Zettler , P Corfdir , L Geelhaar , H Riechert
Nanotechnology 26 ( 44) 445604 -445604
13
2015
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
M Musolino , A Tahraoui , S Fernández-Garrido , O Brandt
Nanotechnology 26 ( 8) 085605
28
2015
Self-assembled growth of GaN nanowires on amorphous Al x O y : from nucleation to the formation of dense nanowire ensembles.
M Sobanska , S Fernández-Garrido , Z R Zytkiewicz , G Tchutchulashvili
Nanotechnology 27 ( 32) 325601 -325601
18
2016
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
S Fernández-Garrido , V M Kaganer , C Hauswald , B Jenichen
Nanotechnology 25 ( 45) 455702
46
2014
Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies.
M Sobanska , Z R Zytkiewicz , G Calabrese , L Geelhaar
Nanotechnology 30 ( 15) 154002
3
2019
Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3.
G Calabrese , G Gao , D van Treeck , P Corfdir
Nanotechnology 30 ( 11) 114001
10
2019
Correlating Composition and Luminescence Variations in III-Nitride Semiconductor Alloys
PR Edwards , K Bejtka , IM Watson , S Fernández-Garrido
Microscopy and Microanalysis 14 762 -763
2008
(V) EELS characterization of InAlN/GaN distributed Bragg reflectors
Alberto Eljarrat Ascunce , Zarko Gacevic , S Fernández-Garrido , Enrique Calleja Pardo
Microscopy and Microanalysis, 2012, vol. 18, num. 05, p. 1143-1154
2012
EELS-HAADF combination for characterization of a new AlN/GaN DBRs growth method.
A Eljarrat , L López-Conesa , Ž Gačević , S Fernández-Garrido
Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles
VM Kaganer , B Jenichen , O Brandt , S Fernández-Garrido
Physical Review B 86 ( 11) 115325
37
2012
Growth modes and chemical-phase separation in GaP1− xNx layers grown by chemical beam epitaxy on GaP/Si (001)
K Ben Saddik , S Fernández-Garrido , R Volkov , J Grandal
Journal of Applied Physics 134 ( 17)
1
2023
Growth of silicon-and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors
K Ben Saddik , AF Braña , N López , BJ García
Journal of Crystal Growth 126242 -126242
3
2021
Luminescence properties of GaP 1− x N x alloys grown on nominally (001)-oriented GaP-on-Si substrates by chemical beam epitaxy
K Ben Saddik , P Álamo , J Lähnemann , R Volkov
2022 Compound Semiconductor Week (CSW) 1 -2
2022
Oliver Brandt Achim Trampert Pierre Corfdir Javier Grandal Dr. Christian Hauswald Johannes K Zettler Vladimir Kaganer Gabriele Calabrese Holger T. Grahn M.A. Sanchez-Garcia zarko gacevic Esperanza Luna Jonas Lähnemann Carsten Pfüller Henning Riechert Laurent Cerutti Thomas Auzelle Sonia Estrade Raffaella Calarco Francesca Peiró