Thierry Taliercio
机构: Université de Montpellier
每年引用次数
引用次数
引用: 3,910
H-指数: 32
I10-指数 : 68
出版物: 260
Etude expérimentale du transfert radiative en champ proche pour la conversion thermophotovoltaïque
Thierry Taliercio , Rodolphe Vaillon , Pierre-Olivier Chapuis , Eric Tournié
Journées Nationales sur l’Energie Solaire
2018
Recent advances in near-field thermophotovoltaics
Thierry Taliercio , Rodolphe Vaillon , Pierre-Olivier Chapuis , Eric Tournié
sTE2C virtual colloquium
2020
Brewster mode : optical monitoring of the semiconductor doping level
Thierry Taliercio , Jean-Jacques Greffet , Laurent Cerutti , Jean-Baptiste Rodriguez
Photonic West OPTO (SPIE)
2016
Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Cell Efficiency above 14.
Thierry Taliercio , Rodolphe Vaillon , Rodolphe Vaillon , Pierre-Olivier Chapuis
Nano Letters
57
2021
Semiconductor-based nanostructures for spectral filtering
Clément Maës , Grégory Vincent , Fernando González-Posada Flores , Laurent Cerutti
Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XVII 11082
2019
Microscopic Description of Radiative Recombinations in InGaN/GaN Quantum Systems
Aurelien Morel , Pierre Lefebvre , Thierry Taliercio , Bernard Gil
MRS Proceedings 743 ( 1) 343 -348
1
2002
2D Assemblies of Silicon Nanocrystallites Prepared by sol-gel Method from Triethoxysilane.
Jerôme Rouquette , Monique Pauthe , Michel Ramonda , Thierry Taliercio
MRS Proceedings 737 ( 1) 461 -467
2
2002
Optical investigation of CdTe monomolecular islands in wide ZnTe/(Zn,Mg)Te quantum wells: Evidence of a vertical self-ordering
Jacques Allègre , Henry Mathieu , Pierre Lefebvre , Vincent Calvo
Physical Review B 56 ( 7) 3907 -3912
21
1997
Direct measurement of the effective infrared dielectric response of a highly doped semiconductor metamaterial
Abeer Al Mohtar , Michel Kazan , Thierry Taliercio , Laurent Cerutti
Nanotechnology 28 ( 12) 125701
4
2017
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
Mohammed Zeghouane , Geoffrey Avit , Yamina André , Thierry Taliercio
Crystal Growth & Design 20 ( 4) 2232 -2239
3
2020
Indium antimonide photovoltaic cells for near-field thermophotovoltaics
Dilek Cakiroglu , Jean-Philippe Perez , Axel Evirgen , Christophe Lucchesi
Solar Energy Materials and Solar Cells 203 110190
4
2019
Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water
Mario Bomers , Davide Maria Di Paola , Laurent Cerutti , Thierry Michel
Semiconductor Science and Technology 33 ( 9) 095009
2
2018
A universal design to realize a tunable perfect absorber from infrared to microwaves
Rafik Smaali , Fatima Omeis , Antoine Moreau , Thierry Taliercio
Scientific Reports 6 ( 1) 32589 -32589
18
2016
Microfluidic surface-enhanced infrared spectroscopy with semiconductor plasmonics for the fingerprint region
Mario Bomers , Benoît Charlot , Franziska Barho , Antoine Chanuel
Reaction Chemistry and Engineering 5 ( 1) 124 -135
4
2020
Long-wave infrared spectral filter with semiconductor materials
Clément Maës , Grégory Vincent , Fernando González-Posada Flores , Laurent Cerutti
Nanophotonics VIII 11345 1134516
1
2020
Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin
Franziska B. Barho , Fernando Gonzalez-Posada , Maria-Jose Milla , Mario Bomers
Nanophotonics 7 ( 2) 507 -516
41
2017
Semiconductor infrared plasmonics
Thierry Taliercio , Paolo Biagioni
Nanophotonics 8 ( 6) 949 -990
85
2019
Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots
Thierry Guillet , Pierre Valvin , Thierry Bretagnon , Bernard Gil
Japanese Journal of Applied Physics 46 ( No. 14) L317 -L319
2
2007
Pseudo volume plasmon in arrays of doped and un-doped semiconductors
Thierry Taliercio , Vilianne N’Tsame Guilengui , Eric Tournié
Applied Physics A 109 ( 4) 927 -934
2012
Arrays of doped and un-doped semiconductors for sensor applications
Thierry Taliercio , Vilianne N’Tsame Guilengui , Eric Tournié
Applied Physics A 109 ( 4) 943 -947
3
2012