Susumu Fukatsu
机构: University of Tokyo, Professor of Physics
每年引用次数
引用次数
引用: 5,515
H-指数: 39
I10-指数 : 115
出版物: 278
Two-dimensional exciton dynamics in InGaAs/GaAs quantum wells
Yutaka Takahashi , Soichi Owa , Satoru S. Kano , Koji Muraki
Applied Physics Letters 60 ( 2) 213 -215
14
1992
Optical properties of electric field controlled lateral superlattices
Hiroshi Mizuta , A. C. Gossard , Y. Yazawa , S. Fukatsu
1992
Electric Field-Driven Ionization and lifetime Decrease of Excitons in type-I SiGe / Si Superlattice
H. J. Lee , S. Fukatsu , J. Y. Kim
대한전자공학회 학술대회 133 -134
1997
Photoluminescence investigation on growth mode changeover of Ge on Si(100)
S. Fukatsu , N. Usami , Y. Shiraki , H. Sunamura
Journal of Crystal Growth 157 ( 1) 265 -269
41
1995
Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure
N. Usami , Y. Shiraki , S. Fukatsu
Journal of Crystal Growth 157 27 -30
5
1995
Quantitative analysis of light emission from SiGe quantum wells
S. Fukatsu , H. Akiyama , Y. Shiraki , H. Sakaki
Journal of Crystal Growth 157 1 -10
27
1995
Field-driven blue shift of excitonic photoluminescence in SiGe quantum wells and superlattices
J.Y. Kim , S. Fukatsu , N. Usami , Y. Shiraki
Journal of Crystal Growth 157 ( 1) 40 -44
7
1995
Anomalous spectral shift of photoluminescence from MBE-grown strained Si1-xGex Si quantum wells mediated by atomic hydrogen
G. Ohta , S. Fukatsu , N. Usami , Y. Shiraki
Journal of Crystal Growth 157 ( 1) 36 -39
3
1995
Incorporation kinetics of rare earth impurities in Si during molecular beam epitaxy
K. Miyashita , D.C. Houghton , Y. Shiraki , S. Fukatsu
Journal of Crystal Growth 157 ( 1) 333 -337
1
1995
Cavity mode luminescence of strained Si1−xGex/Si quantum wells grown on a buried-oxide substrate
S. Fukatsu , D.K. Nayak , Y. Shiraki
Journal of Crystal Growth 150 1055 -1059
3
1995
Luminescence of strained Si1−xGex/Si quantum wells and microstructures
S. Fukatsu , Y. Shiraki
Journal of Crystal Growth 150 1025 -1032
15
1995
Photoluminescence investigation on growth mode changeover in Ge-rich Si1−xGex/Si strained quantum wells
H. Sunamura , S. Fukatsu , Y. Shiraki
Journal of Crystal Growth 150 1038 -1044
11
1995
Crucial role of Si buffer layer quality in the photoluminescence efficiency of strained Si1−xGex/Si quantum wells
T. Mine , N. Usami , Y. Shiraki , S. Fukatsu
Journal of Crystal Growth 150 1033 -1037
1
1995
Cathodoluminescence investigation of SiGe quantum wires fabricated on V-groove patterned Si substrates
V. Higgs , E.C. Lightowlers , N. Usami , Y. Shiraki
Journal of Crystal Growth 150 1070 -1073
8
1995
Growth of InGaAs/GaAs strained quantum wells on GaAs(111)B substrates and continuous wave operation of (111)-oriented InGaAs strained quantum well lasers
T. Takeuchi , K. Muraki , Y. Hanamaki , S. Fukatsu
Journal of Crystal Growth 150 1338 -1343
8
1995
Observation of spatially-indirect transition and accurate determination of band offset ratio by excitation spectroscopy on GaAs/AlGaAs quantum wells lightly doped with Be acceptors
K. Muraki , S. Fukatsu , Y. Shiraki , Y. Takahashi
Journal of Crystal Growth 150 49 -53
3
1995
Strain-induced lateral band gap modulation in Si1−xGex/Si quantum well and quantum wire structures
N. Usami , H. Sunamura , T. Mine , S. Fukatsu
Journal of Crystal Growth 150 1065 -1069
7
1995
Determination of quadratic nonlinear optical coefficient of AlxGa1−xAs system by the method of reflected second harmonics
M. Ohashi , T. Kondo , R. Ito , S. Fukatsu
Journal of Applied Physics 74 ( 1) 596 -601
70
1993
Dislocation glide motion in heteroepitaxial thin films of Si1−xGex/Si(100)
Y. Yamashita , K. Maeda , K. Fujita , N. Usami
Philosophical Magazine Letters 67 ( 3) 165 -171
43
1993
Formation and optical properties of SiGe/Si quantum structures
Y. Shiraki , H. Sunamura , N. Usami , S. Fukatsu
Applied Surface Science 102 263 -271
30
1996