Photoluminescence investigation on growth mode changeover of Ge on Si(100)

作者: S. Fukatsu , N. Usami , Y. Shiraki , H. Sunamura

DOI: 10.1016/0022-0248(95)00324-X

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摘要: Abstract Growth mode changeover during gas source molecular beam epitaxy of Ge on Si(100) is explored by photoluminescence (PL) spectroscopy with a subatomic layer resolution. By observing confinement effect and development island-related emissions increasing coverage in Si/pure-Ge/Si quantum wells, the onset island formation determined to be 3.7 monolayers (ML). Furthermore, equilibrium critical thickness for found lower, i.e. 3.0 ML, adopting growth interruption after growth. Intense quantum-confined PL clearly observed at room temperature from islanded dot character, demonstrating potential islands as efficient light emitters.

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