X‐ray and Raman scattering characterization of Ge/Si buried layers
作者： R. L. Headrick , J.‐M. Baribeau , D. J. Lockwood , T. E. Jackman , M. J. Bedzyk
DOI: 10.1063/1.108840
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摘要: Germanium buried layers in (001) oriented silicon with thicknesses of 2–12 monolayers have been studied synchrotron x‐ray diffraction, reflectivity, and Raman scattering spectroscopy visible light. Relaxation, strain, intermixing observed via diffraction is inferred from vibrational frequency shifts.
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