Subthreshold performance consideration of a novel architecture: ISEGaS deca-nanometer MOSFET

Ravneet Kaur , Rishu Chaujar , Manoj Saxena , R. S. Gupta
international workshop on physics of semiconductor devices 123 -126

2007
Nanoscale insulated shallow extension MOSFET with Dual Material Gate for high performance analog operations

Ravneet Kaur , Rishu Chaujar , Manoj Saxena , R. S. Gupta
international workshop on physics of semiconductor devices 171 -173

2
2007
A 2-D analytical subthreshold model for gate misalignment effects on graded channel DG FD SOI n-MOSFET

Rupendra Kumar Sharma , Manoj Saxena , Mridula Gupta , R. S. Gupta
2007 International Workshop on Physics of Semiconductor Devices 183 -186

1
2007
3-dimensional analytical modeling and simulation of fully depleted AlGaN/GaN modulation doped field effect transistor

Sona P Kumar , Anju Agrawal , Rishu Chaujar , Sneha Kabra
international workshop on physics of semiconductor devices 373 -376

2
2007
An analytical model for admittance parameters of GaN MESFET for microwave circuit applications

Sneha Kabra , H. Kaur , S. Haldar , M. Gupta
international workshop on physics of semiconductor devices 456 -458

2007
Child survival and safe motherhood program in Rajasthan

SK Jain , Uma Chawla , Neeru Gupta , RS Gupta
The Indian Journal of Pediatrics 73 ( 1) 43 -47

9
2006
Electrical properties of boron‐doped hydrogenated amorphous silicon and n‐type GaAs heterojunction

Alka Nagpal , R. S. Gupta , G. P. Srivastava
Journal of Applied Physics 70 ( 7) 3730 -3733

1991
An analytical model for GaN MESFET's using new velocity-field dependence

Sneha Kabra , Harsupreet Kaur , Subhasis Haldar , Mridula Gupta
Physica Status Solidi (c) 3 ( 6) 2350 -2355

4
2006
Analytical drain current formulation for gate dielectric engineered dual material gate-gate all around-tunneling field effect transistor

Jaya Madan , R. S. Gupta , Rishu Chaujar
Japanese Journal of Applied Physics 54 ( 9) 094202

24
2015
Computational analysis of potential profile of III-V heterojunction gate-all-around Tunneling FET for low power digital circuits

Manjula Vijh , R. S. Gupta , Sujata Pandey
ieee international conference on recent trends in electronics information communication technology 839 -842

2016
GaN based tunnel field effect transistor for terahertz applications

Manjula Vijh , R. S. Gupta , Sujata Pandey
2017 Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL)

2
2017
Switching characteristics of InN tunnel field effect transistor and its application in the design of RF amplifiers

Manjula Vijh , R. S. Gupta , Sujata Pandey
2017 Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL)

1
2017
Channel Material Engineered Nanoscale Cylindrical Surrounding Gate MOSFET with Interface Fixed Charges

Rajni Gautam , Manoj Saxena , R. S. Gupta , Mridula Gupta
Springer Berlin Heidelberg 476 -485

2011
Effect of Temperature and Gate Stack on the Linearity and Analog Performance of Double Gate Tunnel FET

Rakhi Narang , Manoj Saxena , R. S. Gupta , Mridula Gupta
Springer, Berlin, Heidelberg 466 -475

5
2011
Optimization of the gate misalignment effects in graded channel DG FD SOI n-MOSFET with high - κ gate dielectrics

Rupendra Kumar Sharma , Mridula Gupta , R. S. Gupta
international conference on recent advances in microwave theory and applications 50 -52

4
2008
Impact of gate stack configuration onto the rf/analog performance of ISE MOSFET

Ravneet Kaur , Rishu Chaujar , Manoj Saxena , R. S. Gupta
international conference on recent advances in microwave theory and applications 686 -688

2008
Control of the barrier height of triangular‐barrier diodes by doping their intrinsic layers

R. S. Gupta , G. S. Chilana
Journal of Applied Physics 63 ( 4) 1207 -1211

3
1988
An accurate 2-D model for transconductance-to-current ratio and drain conductance of vertical surrounding-gate (VSG) MOSFETs for microwave circuit applications

Abhinav Kranti , Rashmi , S. Haldar , R. S. Gupta
Microwave and Optical Technology Letters 31 ( 6) 415 -421

2001
Admittance parameter and unilateral power‐gain evaluation of GaN MESFET for microwave circuit applications

Adarsh Singh , Srikanta Bose , Mridula Gupta , R. S. Gupta
Microwave and Optical Technology Letters 31 ( 5) 387 -393

2
2001